component
G830K
Public Made by Adomby adom
GOFORD MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownG830K
GOFORD · MOSFETs · TO-252
G830K from GOFORD, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGS rated ±30V max, threshold 2 to 4V at ID = 250μA, gate leakage ±100nA max at VGS = ±30V. |
| 2 | D | passive | Drain; VDSS 500V, continuous current 5A at TC=25℃, pulsed 20A, RDS(on) 1.4Ω max at VGS = 10V. |
| 3 | S | passive | Source; body diode continuous forward current 5A, pulsed 20A, VSD 1.4V max at IS = 5A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 500 | V | VGS = 0V, ID = 250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 500V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS = 400V, TC = 125℃ | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±30V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 1.4 | Ω | VGS = 10V, ID = 2.5A | 2 | ||
| Maximum Continuous Drain to Source Diode Forward Current | IS | 5 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 20 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0V, IS = 5A | 2 | ||
| Drain-Source Voltage | VDSS | 500 | V | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 5 | A | TC = 25℃; TO-252 column, limited by maximum junction temperature | 1 | ||
| Continuous Drain Current | ID | 3.2 | A | TC = 100℃; TO-252 column | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 150 | mJ | Note 2: L = 10mH, IAS = 6A, VDD = 50V, RG = 25Ω, starting TJ = 25°C | 1 | ||
| Power Dissipation | PD | 45 | W | TC = 25℃; TO-252 column | 1 | ||
| Linear Derating Factor | 0.36 | W/℃ | TC > 25℃; TO-252 column | 1 | |||
| Thermal Resistance, Junction to Case | RθJC | 2.8 | ℃/W | TO-252 column | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
G830K - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
g830k-etched.step/g830k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g830k.step/g830k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
488e66f72dffb14a, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).