component
AGM325ME
Public Made by Adomby adom
AGM Semi MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAGM325ME
AGM Semi · MOSFETs · SOT-23-6
AGM325ME from AGM Semi, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1 (Pin 1 marked); gate-source voltage rated ±20 V, threshold 1.2 V to 2.2 V. |
| 2 | S2 | passive | Source of MOSFET 2. |
| 3 | G2 | input | Gate of MOSFET 2; gate-source voltage rated ±20 V, threshold 1.2 V to 2.2 V. |
| 4 | D2 | passive | Drain of MOSFET 2; drain-source voltage rated 30 V. |
| 5 | S1 | passive | Source of MOSFET 1. |
| 6 | D1 | passive | Drain of MOSFET 1; drain-source voltage rated 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (VGS=0V) | VDS | 30 | V | VGS=0V | 1 | ||
| Gate-Source Voltage (VDS=0V) | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous(TA=25℃) (Note 1) | ID | 5.5 | A | TA=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous(TA=70℃) | ID | 3 | A | TA=70℃ | 1 | ||
| Drain Current-Pulsed (Note 2) | IDM (pluse) | 22 | A | Note 2 | 1 | ||
| Total Power Dissipation(TA=25℃) | PD | 1.25 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 100 | ℃/W | Steady State (Note 1) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 2.2 | V | VDS=VGS,ID=250μA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 17 | 35 | mΩ | VGS=10V, ID=3.5A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 26 | 40 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Source-Drain Current(Body Diode) | ISD | 5.5 | A | 2 | |||
| Forward on Voltage | VSD | 0.8 | 1.2 | V | VGS=0V,IS=5A | 2 |
CAD (KiCad official)
- Symbol:
AGM325ME - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
agm325me-etched.step/agm325me-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm325me.step/agm325me.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM Semi datasheet (7 pp, sha256
5bec5425d8c226f0, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).