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SQ4470EY-T1_GE3

Public Made by Adom

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Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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SQ4470EY-T1_GE3

Vishay Intertech · MOSFETs · SO-8

SQ4470EY-T1_GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; the datasheet rates the continuous source (diode) current at IS = 6 A and the pulsed current at ISM = 67 A.
2 S passive Source terminal of the N-channel MOSFET; the datasheet rates the continuous source (diode) current at IS = 6 A and the pulsed current at ISM = 67 A.
3 S passive Source terminal of the N-channel MOSFET; the datasheet rates the continuous source (diode) current at IS = 6 A and the pulsed current at ISM = 67 A.
4 G passive Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±20 V (VGS).
5 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 60 V (VDS) and continuous drain current at 16 A with TC = 25 °C.
6 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 60 V (VDS) and continuous drain current at 16 A with TC = 25 °C.
7 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 60 V (VDS) and continuous drain current at 16 A with TC = 25 °C.
8 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 60 V (VDS) and continuous drain current at 16 A with TC = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 60 V 1
Gate-source voltage VGS -20 20 V 1
Continuous drain current ID 16 A TC = 25 °C 1
Continuous drain current ID 9 A TC = 125 °C 1
Continuous source current (diode conduction) IS 6 A 1
Pulsed drain current IDM 67 A 1
Single pulse avalanche current IAS 50 A L = 0.1 mH 1
Single pulse avalanche energy EAS 125 mJ 1
Maximum power dissipation PD 7.1 W TC = 25 °C 1
Maximum power dissipation PD 2.3 W TC = 125 °C 1
Operating junction and storage temperature range TJ, Tstg -55 175 °C 1
Junction-to-ambient thermal resistance RthJA 80 °C/W PCB mount 1
Junction-to-case (drain) thermal resistance RthJF 21 °C/W 1
Drain-source breakdown voltage VDS 60 V VGS = 0, ID = 250 μA 2
Gate-source threshold voltage VGS(th) 2.5 3 3.5 VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero gate voltage drain current IDSS 1 μA VGS = 0 V, VDS = 60 V 2
Zero gate voltage drain current IDSS 50 μA VGS = 0 V, VDS = 60 V, TJ = 125 °C 2
Zero gate voltage drain current IDSS 250 μA VGS = 0 V, VDS = 60 V, TJ = 175 °C 2
On-state drain current ID(on) 30 A VGS = 10 V, VDS ≥ 5 V 2
Drain-source on-state resistance RDS(on) 0.01 0.012 Ω VGS = 10 V, ID = 6 A 2
Drain-source on-state resistance RDS(on) 0.021 Ω VGS = 10 V, ID = 6 A, TJ = 125 °C 2
Drain-source on-state resistance RDS(on) 0.025 Ω VGS = 10 V, ID = 6 A, TJ = 175 °C 2
Drain-source on-state resistance RDS(on) 0.012 0.014 Ω VGS = 6 V, ID = 5 A 2
Input capacitance Ciss 2531 3165 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Output capacitance Coss 382 480 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Reverse transfer capacitance Crss 153 195 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Total gate charge Qg 45 68 nC VGS = 10 V, VDS = 30 V, ID = 12 A 2
Gate resistance Rg 0.4 0.87 1.3 Ω f = 1 MHz 2
Turn-on delay time td(on) 13 20 ns VDD = 30 V, RL = 2.5 Ω, ID ≅ 12 A, VGEN = 10 V, Rg = 1 Ω 2
Rise time tr 12 18 ns VDD = 30 V, RL = 2.5 Ω, ID ≅ 12 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-off delay time td(off) 25 38 ns VDD = 30 V, RL = 2.5 Ω, ID ≅ 12 A, VGEN = 10 V, Rg = 1 Ω 2
Fall time tf 9 14 ns VDD = 30 V, RL = 2.5 Ω, ID ≅ 12 A, VGEN = 10 V, Rg = 1 Ω 2
Pulsed current ISM 67 A 2
Forward voltage VSD 0.72 1.2 V IF = 1.7 A, VGS = 0 2

CAD (KiCad official)

  • Symbol: SQ4470EY-T1_GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: sq4470ey-t1-ge3-etched.step / sq4470ey-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sq4470ey-t1-ge3.step / sq4470ey-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (10 pp, sha256 34ffd180e4e3087f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF