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IRF8788TRPBF-VB

Public Made by Adom

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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IRF8788TRPBF-VB

VBsemi Elec · MOSFETs · SO-8

IRF8788TRPBF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET (pins 1-3 are source).
2 S passive Source of the N-channel MOSFET (pins 1-3 are source).
3 S passive Source of the N-channel MOSFET (pins 1-3 are source).
4 G input Gate of the N-channel MOSFET, rated at VGS ±20 V maximum with threshold 1.0 to 3.0 V.
5 D passive Drain of the N-channel MOSFET, rated at VDS 30 V (pins 5-8 are drain).
6 D passive Drain of the N-channel MOSFET, rated at VDS 30 V (pins 5-8 are drain).
7 D passive Drain of the N-channel MOSFET, rated at VDS 30 V (pins 5-8 are drain).
8 D passive Drain of the N-channel MOSFET, rated at VDS 30 V (pins 5-8 are drain).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 30 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.003 Ω VGS = 10 V, ID = 25 A 2
Drain-Source On-State Resistance RDS(on) 0.004 Ω VGS = 4.5 V, ID = 22 A 2
Forward Transconductance gfs 110 S VDS = 15 V, ID = 25 A 2
Diode Forward Voltage VSD 0.72 1.1 V IS = 2.9 A, VGS = 0 V 2
Total Gate Charge Qg 45 70 nC VDS = 15 V, VGS = 4.5 V, ID = 20 A 2
Turn-On Delay Time td(on) 27 40 ns VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Rise Time tr 21 35 ns VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Turn-Off Delay Time td(off) 107 160 ns VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Fall Time tf 43 65 ns VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Source-Drain Reverse Recovery Time trr 45 70 ns IF = 2.9 A, dI/dt = 100 A/µs 2
Drain-Source Voltage VDS 30 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current, 10 s ID 25 A TJ = 150 °C, TA = 25 °C, 10 s 1
Continuous Drain Current, Steady State ID 17 A TJ = 150 °C, TA = 25 °C, steady state 1
Continuous Drain Current, 10 s ID 20 A TJ = 150 °C, TA = 70 °C, 10 s 1
Continuous Drain Current, Steady State ID 13 A TJ = 150 °C, TA = 70 °C, steady state 1
Pulsed Drain Current IDM 70 A 10 µs pulse width 1
Continuous Source Current, 10 s IS 2.9 A Diode conduction, 10 s 1
Continuous Source Current, Steady State IS 1.3 A Diode conduction, steady state 1
Avalanche Current IAS 50 A 1
Maximum Power Dissipation, 10 s PD 3.5 W TA = 25 °C, 10 s 1
Maximum Power Dissipation, Steady State PD 1.6 W TA = 25 °C, steady state 1
Maximum Power Dissipation, 10 s PD 2.2 W TA = 70 °C, 10 s 1
Maximum Power Dissipation, Steady State PD 1 W TA = 70 °C, steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance, t ≤ 10 s RthJA 29 35 °C/W t ≤ 10 s 1
Junction-to-Ambient Thermal Resistance, Steady State RthJA 67 80 °C/W Steady state 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 13 16 °C/W Steady state 1
Input Capacitance Ciss 6500 pF VDS = 15 V, VGS = 4.5 V, ID = 20 A 2
Output Capacitance Coss 930 pF VDS = 15 V, VGS = 4.5 V, ID = 20 A 2
Reverse Transfer Capacitance Crss 610 pF VDS = 15 V, VGS = 4.5 V, ID = 20 A 2
Gate-Source Charge Qgs 20 nC VDS = 15 V, VGS = 4.5 V, ID = 20 A 2
Gate-Drain Charge Qgd 16 nC VDS = 15 V, VGS = 4.5 V, ID = 20 A 2
Gate Resistance Rg 1.1 Ω f = 1.0 MHz 2

CAD (KiCad official)

  • Symbol: IRF8788TRPBF-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irf8788trpbf-vb-etched.step / irf8788trpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf8788trpbf-vb.step / irf8788trpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 5182cd7bef06d70c, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF