component
OSG65R900DTF
Public Made by Adomby adom
ORIENTAL SEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownOSG65R900DTF
ORIENTAL SEMI · MOSFETs · TO-252
OSG65R900DTF from ORIENTAL SEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±30 V and a threshold of 2.9 to 3.9 V at ID=250 μA. |
| 2 | D | passive | Drain, also connected to the mounting tab; VDS rated 650 V, continuous ID 4.5 A at TC=25 °C. |
| 3 | S | passive | Source; the body diode runs from source to drain, with continuous diode current IS of 4.5 A at TC=25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ORIENTAL SEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=250 μA | 2 | ||
| Drain-source breakdown voltage (Tj=150 °C) | BVDSS | 700 | V | VGS=0 V, ID=250 μA, Tj=150 °C | 2 | ||
| Gate threshold voltage | VGS(th) | 2.9 | 3.9 | V | VDS=VGS, ID=250 μA | 2 | |
| Drain-source on-state resistance | RDS(ON) | 0.75 | 0.9 | Ω | VGS=10 V, ID=2 A | 2 | |
| Drain-source on-state resistance (Tj=150 °C) | RDS(ON) | 1.75 | Ω | VGS=10 V, ID=2 A, Tj=150 °C | 2 | ||
| Gate-source leakage current (positive bias) | IGSS | 100 | nA | VGS=30 V | 2 | ||
| Gate-source leakage current (negative bias) | IGSS | -100 | nA | VGS=-30 V | 2 | ||
| Drain-source leakage current | IDSS | 1 | μA | VDS=650 V, VGS=0 V | 2 | ||
| Drain-source voltage | VDS | 650 | V | 2 | |||
| Gate-source voltage | VGS | -30 | 30 | V | 2 | ||
| Continuous drain current | ID | 4.5 | A | TC=25 °C | 2 | ||
| Continuous drain current | ID | 2.8 | A | TC=100 °C | 2 | ||
| Pulsed drain current | ID, pulse | 13.5 | A | TC=25 °C | 2 | ||
| Continuous diode forward current | IS | 4.5 | A | TC=25 °C | 2 | ||
| Diode pulsed current | IS, pulse | 13.5 | A | TC=25 °C | 2 | ||
| Power dissipation | PD | 32 | W | TC=25 °C | 2 | ||
| Single pulsed avalanche energy | EAS | 50 | mJ | 2 | |||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0…480 V | 2 | ||
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0…480 V, ISD≤ID | 2 | ||
| Operation and storage temperature | Tstg, Tj | -55 | 150 | °C | 2 | ||
| Thermal resistance, junction-case | RθJC | 3.9 | °C/W | 2 | |||
| Thermal resistance, junction-ambient | RθJA | 62 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
OSG65R900DTF - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
osg65r900dtf-etched.step/osg65r900dtf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);osg65r900dtf.step/osg65r900dtf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ORIENTAL SEMI datasheet (8 pp, sha256
f2a7604051250cfc, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).