component
TISP4030L1AJR-S
Public Made by Adomby adom
BOURNS Semiconductor Discharge Tubes (TSS), DO-214AC. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTISP4030L1AJR-S
BOURNS · Semiconductor Discharge Tubes (TSS) · DO-214AC
TISP4030L1AJR-S from BOURNS, in a DO-214AC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T | passive | Terminal T is the alternative line designator A and is one of the two protected line terminals of the symmetrical bidirectional thyristor overvoltage protector, with VDRM of ±15 V and V(BO) of ±30 V for the TISP4030. |
| 2 | R | passive | Terminal R is the alternative line designator B and is the reference terminal to which all datasheet measurements are referenced, with VDRM of ±15 V and V(BO) of ±30 V for the TISP4030. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | BOURNS |
| Package | DO-214AC |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage ('4030) | VDRM | -15 | 15 | V | 2 | ||
| Repetitive peak off-state current | IDRM | -5 | 5 | µA | VD = VDRM | 2 | |
| Breakover voltage ('4030) | V(BO) | -30 | 30 | V | di/dt = ±0.8 A/ms | 2 | |
| Impulse breakover voltage ('4030) | V(BO) | -50 | 50 | V | dv/dt = ±1000 V/µs, linear voltage ramp, maximum ramp value = ±500 V; di/dt = ±5 A/µs, linear current ramp, maximum ramp value = ±10 A | 2 | |
| Breakover current | I(BO) | -0.8 | 0.8 | A | di/dt = ±0.8 A/ms | 2 | |
| Off-state current ('4030) | ID | -2 | 2 | µA | VD = ±13 V | 2 | |
| Holding current | IH | -50 | 50 | mA | IT = ±5 A, di/dt = +/-30 mA/ms | 2 | |
| Off-state capacitance ('4030) | Coff | 27 | 35 | pF | f = 1 MHz, Vd = 1 V rms, VD = 0 | 3 | |
| Off-state capacitance ('4030) | Coff | 24 | 31 | pF | f = 1 MHz, Vd = 1 V rms, VD = 1 V | 3 | |
| Off-state capacitance ('4030) | Coff | 22 | 29 | pF | f = 1 MHz, Vd = 1 V rms, VD = 2 V | 3 | |
| Non-repetitive peak on-state pulse current 2/10 µs | ITSP | -150 | 150 | A | 2/10 µs (Telcordia GR-1089-CORE, 2/10 µs voltage wave shape) | 2 | |
| Non-repetitive peak on-state pulse current 8/20 µs | ITSP | -120 | 120 | A | 8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) | 2 | |
| Non-repetitive peak on-state pulse current 10/160 µs | ITSP | -65 | 65 | A | 10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) | 2 | |
| Non-repetitive peak on-state pulse current 5/310 µs | ITSP | -45 | 45 | A | 5/310 µs (ITU-T K.20/45/21, 10/700 µs voltage wave shape) | 2 | |
| Non-repetitive peak on-state pulse current 5/320 µs | ITSP | -45 | 45 | A | 5/320 µs (FCC Part 68, 9/720 µs voltage wave shape) | 2 | |
| Non-repetitive peak on-state pulse current 10/560 µs | ITSP | -35 | 35 | A | 10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) | 2 | |
| Non-repetitive peak on-state pulse current 10/1000 µs | ITSP | -30 | 30 | A | 10/1000 µs (Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape) | 2 | |
| Non-repetitive peak on-state current 20 ms | ITSM | 20 | A | 20 ms (50 Hz) full sine wave | 2 | ||
| Non-repetitive peak on-state current 16.7 ms | ITSM | 22 | A | 16.7 ms (60 Hz) full sine wave | 2 | ||
| Non-repetitive peak on-state current 0.2 s | ITSM | 13 | A | 0.2 s 50 Hz/60 Hz a.c. | 2 | ||
| Non-repetitive peak on-state current 2 s | ITSM | 5 | A | 2 s 50 Hz/60 Hz a.c. | 2 | ||
| Non-repetitive peak on-state current 1000 s | ITSM | 1.8 | A | 1000 s 50 Hz/60 Hz a.c. | 2 | ||
| Initial rate of rise of current | di/dt | 130 | A/µs | 2/10 µs waveshape | 2 | ||
| Maximum junction temperature | TJM | 150 | °C | 2 | |||
| Storage temperature range | Tstg | -65 | 150 | °C | 2 | ||
| Junction to free air thermal resistance (SMA) | RθJA | 125 | °C/W | EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 °C, SMA | 3 | ||
| Junction to free air thermal resistance (SMA, 4-layer PCB) | RθJA | 60 | °C/W | 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 °C, SMA | 3 |
CAD (KiCad official)
- Symbol:
TISP4030L1AJR-S - Footprint:
Diode_SMD:D_SMA - 3D model: DO-214AC (KiCad packages3D, STEP)
- 3D model files:
tisp4030l1ajr-s-etched.step/tisp4030l1ajr-s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tisp4030l1ajr-s.step/tisp4030l1ajr-s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: BOURNS datasheet (12 pp, sha256
24f328fd89bc6349, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).