component
AO4435-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownAO4435-HXY
HXY MOSFET · MOSFETs · SOP-8
AO4435-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the device is rated VDS = -30V (drain-source) with VGS limited to ±20V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the device is rated VDS = -30V (drain-source) with VGS limited to ±20V. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the device is rated VDS = -30V (drain-source) with VGS limited to ±20V. |
| 4 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±20V, and the datasheet specifies VGS(th) of -1.0 to -2.5V at ID = -250μA. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is rated -11A at TA = 25°C with RDS(on) < 16mΩ at VGS = -10V. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is rated -11A at TA = 25°C with RDS(on) < 16mΩ at VGS = -10V. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is rated -11A at TA = 25°C with RDS(on) < 16mΩ at VGS = -10V. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is rated -11A at TA = 25°C with RDS(on) < 16mΩ at VGS = -10V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current | ID | -11 | A | TA=25°C, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | -40 | A | 1 | |||
| Total Power Dissipation | PD | 3.7 | W | TA=25°C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 33.8 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-30V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Static Drain-Source on-Resistance (VGS=-10V) | RDS(on) | 13 | 16 | mΩ | VGS=-10V, ID=-10A | 2 | |
| Static Drain-Source on-Resistance (VGS=-4.5V) | RDS(on) | 18 | 27 | mΩ | VGS=-4.5V, ID=-5A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | -11 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | -40 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS=0V, IS=-15A | 2 |
CAD (KiCad official)
- Symbol:
AO4435-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4435-hxy-etched.step/ao4435-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4435-hxy.step/ao4435-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
9ff7d0eea364cb18, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).