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Contents

README

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CMD1653

Cmos(广东场效应半导体) · MOSFETs · TO-252

CMD1653 from Cmos(广东场效应半导体), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±20 V (VGS).
2 D passive Drain terminal; drain-source voltage is rated at 30 V (VDS) with continuous drain current of 50 A at TC=25°C.
3 S passive Source terminal; continuous source current is rated at 50 A (IS) and pulsed source current at 150 A (ISM).

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS 20 V 1
Continuous Drain Current ID@TC=25 50 A 1
Continuous Drain Current ID@TC=100 40 A 1
Pulsed Drain Current IDM 150 A 1
Single Pulse Avalanche Energy EAS 55 mJ VDD=15V, VGS=10V, L=1.0mH, IAS=10A 1
Avalanche Current IAS 40 A 1
Total Power Dissipation PD@TC=25 50 W 1
Storage Temperature Range TSTG -55 175 1
Operating Junction Temperature Range TJ -55 175 1
Thermal Resistance Junction-ambient R JA 45 /W surface mounted on 1 inch2 FR-4 board, 2OZ copper (note 1) 1
Thermal Resistance Junction-Case R JC 2.5 /W surface mounted on 1 inch2 FR-4 board, 2OZ copper (note 1) 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 6.5 8 m VGS=10V, ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 11 14 m VGS=4.5V, ID=20A 2
Gate Threshold Voltage VGS(th) 3 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 10 uA VDS=24V, VGS=0V, TJ=150℃ 2
Gate-Source Leakage Current IGSS 100 nA VGS 20V, VDS=0V 2
Continuous Source Current IS 50 A 2
Pulsed Source Current ISM 150 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=20A, TJ=25℃ 2
BVDSS Temperature Coefficient BVDSS TJ 0.023 V/ Reference to 25, ID=250uA 2
VGS(th) Temperature Coefficient VGS(th) -5 mV/ VGS=VDS, ID=250uA 2
Forward Transconductance gfs 35 S VDS=5V, ID=10A 2
Gate Resistance Rg 2.4 VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 12 nC VDS=15V, VGS=4.5V, ID=20A 2
Gate-Source Charge Qgs 4.5 nC VDS=15V, VGS=4.5V, ID=20A 2
Gate-Drain Charge Qgd 6 nC VDS=15V, VGS=4.5V, ID=20A 2
Turn-On Delay Time Td(on) 10 ns VDD=15V, VGS=10V, RG=3.3, ID=20A 2
Rise Time Tr 25 ns VDD=15V, VGS=10V, RG=3.3, ID=20A 2
Turn-Off Delay Time Td(off) 20 ns VDD=15V, VGS=10V, RG=3.3, ID=20A 2
Fall Time Tf 14 ns VDD=15V, VGS=10V, RG=3.3, ID=20A 2
Input Capacitance Ciss 950 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 380 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 180 pF VDS=15V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: CMD1653
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: cmd1653-etched.step / cmd1653-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmd1653.step / cmd1653.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (2 pp, sha256 36dd4f3f81e7e194, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF