component
15N06G-TN3-R
Public Made by Adomby adom
UTC Unisonic Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown15N06G-TN3-R
UTC Unisonic Tech · MOSFETs · TO-252
15N06G-TN3-R from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage absolute maximum of VGSS ±15 V and a gate threshold VGS(TH) of 1 to 2.5 V at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain of the N-channel MOSFET; the datasheet rates the drain-source voltage VDSS at 60 V and the continuous drain current at 15 A (TC=25°C). |
| 3 | S | passive | Source of the N-channel MOSFET; the datasheet gives no source-specific limit, and the device body-diode continuous current IS is rated at 15 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | TC=25°C, unless otherwise specified | 3 | ||
| Drain-Gate Voltage | VDGR | 60 | V | RG=20kΩ | 3 | ||
| Gate-Source Voltage | VGSS | -15 | 15 | V | Printed as ±15 V | 3 | |
| Continuous Drain Current | ID | 15 | A | TC=25°C | 3 | ||
| Pulsed Drain Current | IDM | 60 | A | Pulse width limited by safe operating area (Note 2) | 3 | ||
| Avalanche Current | IAR | 15 | A | Note 3: pulse width limited by TJ(MAX), δ<1% | 3 | ||
| Avalanche Energy Single Pulsed | EAS | 50 | mJ | Note 4: starting TJ=25°C, ID=IAR, VDD=25V | 3 | ||
| Avalanche Energy Repetitive | EAR | 12 | mJ | Note 3 | 3 | ||
| Power Dissipation TO-251/TO-252 | PD | 62.5 | W | TC=25°C, TO-251/TO-252 package | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -65 | 150 | °C | 3 | ||
| Junction to Ambient TO-251/TO-252 | θJA | 90 | °C/W | Note: device mounted on FR-4 PC board, 2oz copper, with 1 inch square copper plate | 3 | ||
| Junction to Case TO-251/TO-252 | θJC | 2 | °C/W | Note: device mounted on FR-4 PC board, 2oz copper, with 1 inch square copper plate | 3 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250µA; TJ=25°C | 4 | ||
| Drain-Source Leakage Current | IDSS | 250 | µA | VDS=Max Rating | 4 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±15V; printed as ±100 nA | 4 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250 µA | 4 |
| On State Drain Current | ID(ON) | 15 | A | VDS>ID(ON)×RDS(ON)MAX, VGS=10V | 4 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 75 | 100 | mΩ | VGS=5V, ID=7.5A | 4 | |
| Forward Transconductance | gFS | 3 | 5 | S | VDS>ID(ON)×RDS(ON)MAX, ID=7.5A | 4 | |
| Input Capacitance | CISS | 347 | 950 | pF | VDS=25V, VGS=0V, f=1MHz | 4 | |
| Output Capacitance | COSS | 136 | 310 | pF | VDS=25V, VGS=0V, f=1MHz | 4 | |
| Reverse Transfer Capacitance | CRSS | 19 | 110 | pF | VDS=25V, VGS=0V, f=1MHz | 4 | |
| Total Gate Charge | QG | 10 | 30 | nC | VDD=40V, VGS=5V, ID=15A | 4 | |
| Gate Source Charge | QGS | 5 | nC | VDD=40V, VGS=5V, ID=15A | 4 | ||
| Gate Drain Charge | QGD | 3 | nC | VDD=40V, VGS=5V, ID=15A | 4 | ||
| Turn-ON Delay Time | tD(ON) | 10.5 | 60 | ns | VGS=5V, VDD=30V, RG=4.7Ω, ID=7.5A | 4 | |
| Turn-ON Rise Time | tR | 16.8 | 200 | ns | VGS=5V, VDD=30V, RG=4.7Ω, ID=7.5A | 4 | |
| Turn-OFF Delay Time | tD(OFF) | 63.7 | 80 | ns | VGS=10V, VDD=48V, RG=47Ω, ID=15A | 4 | |
| Turn-OFF Fall Time | tF | 24.1 | 140 | ns | VGS=10V, VDD=48V, RG=47Ω, ID=15A | 4 | |
| Maximum Body-Diode Continuous Current | IS | 15 | A | 4 | |||
| Maximum Body-Diode Pulsed Current | ISM | 60 | A | 4 | |||
| Diode Forward Voltage | VSD | 1.5 | V | ISD=15A, VGS=0V (Note 1: pulse width=300µs, duty cycle=1.5%) | 4 | ||
| Reverse Recovery Time | trr | 36 | ns | IS=10A, VGS=0V, dIF/dt=100A/µs | 4 | ||
| Reverse Recovery Charge | Qrr | 98 | nC | 4 |
CAD (KiCad official)
- Symbol:
15N06G-TN3-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
15n06g-tn3-r-etched.step/15n06g-tn3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);15n06g-tn3-r.step/15n06g-tn3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (7 pp, sha256
13523e340570ae71, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).