component
CMN5N20
Public Made by Adomby adom
Cmos(广东场效应半导体) , SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCMN5N20
Cmos(广东场效应半导体) · IC · SOT-23-3L
CMN5N20 from Cmos(广东场效应半导体), in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20V and RDS(on) specified at VGS=10V and 4.5V, threshold 1.0V to 3.0V. |
| 2 | S | passive | Source; main current terminal, continuous drain current 4A at TA=25°C, 12A pulsed. |
| 3 | D | passive | Drain; drain-source voltage rated 200V, with RDS(on) of 590mΩ max at VGS=10V, ID=2.5A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | SOT-23-3L |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS=0V , ID=250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VGS=VDS , ID =250uA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 530 | 590 | mΩ | VGS=10V, ID=2.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 550 | 640 | mΩ | VGS=4.5V , ID=2.5A | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=200V , VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V, VDS=0V | 2 | |
| Diode Forward Voltage | VSD | 0.88 | 1.2 | V | VGS=0V , IS =4A | 2 | |
| Drain-Source Voltage | VDS | 200 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID@TA=25℃ | 4 | A | 2 | |||
| Pulsed Drain Current | IDM | 12 | A | 2 | |||
| Total Power Dissipation | PD@TA=25℃ | 2 | W | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction-ambient | R JA | 85 | ℃/ W | 2 |
CAD (KiCad official)
- Symbol:
CMN5N20 - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
cmn5n20-etched.step/cmn5n20-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmn5n20.step/cmn5n20.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256
fb46dd44751bf1e7, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).