component
HXY6800LI
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownHXY6800LI
HXY MOSFET · MOSFETs · SOT-23-6L
HXY6800LI from HXY MOSFET, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1; gate threshold VGS(th) 1.0 to 2.5 V, VGS max ±20 V. |
| 2 | S2 | passive | Source of MOSFET 2; body diode continuous forward current up to 4.5 A. |
| 3 | G2 | input | Gate of MOSFET 2; gate threshold VGS(th) 1.0 to 2.5 V, VGS max ±20 V. |
| 4 | D2 | passive | Drain of MOSFET 2; VDS max 30 V, continuous ID 4.5 A, pulsed 15 A. |
| 5 | S1 | passive | Source of MOSFET 1; body diode continuous forward current up to 4.5 A. |
| 6 | D1 | passive | Drain of MOSFET 1; VDS max 30 V, continuous ID 4.5 A, pulsed 15 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 29 | 38 | mΩ | VGS=10V, ID=4A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 45 | 65 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 4.5 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 16 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=4A | 2 | ||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Drain Current | ID@TA=25℃ | 4.5 | A | TA=25℃, VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 15 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.25 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 125 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
HXY6800LI - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
hxy6800li-etched.step/hxy6800li-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hxy6800li.step/hxy6800li.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
216ac03466a0ef89, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).