component
CSD25310Q2T
Public Made by Adomby adom
Texas Instruments MOSFETs, WSON-6(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCSD25310Q2T
Texas Instruments · MOSFETs · WSON-6(2x2)
CSD25310Q2T from Texas Instruments, in a WSON-6(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the -20V P-channel NexFET; the datasheet gives the source connection with VGS max ±8V and continuous drain current of -9.6A. |
| 2 | S | passive | Source terminal of the -20V P-channel NexFET, electrically common with the other source pins. |
| 3 | S | passive | Source terminal of the -20V P-channel NexFET, electrically common with the other source pins. |
| 4 | S | passive | Source terminal of the -20V P-channel NexFET, electrically common with the other source pins. |
| 5 | S | passive | Source terminal of the -20V P-channel NexFET, electrically common with the other source pins. |
| 6 | G | input | Gate terminal, with gate-to-source voltage limited to ±8V and threshold voltage of -0.55V to -1.10V (-0.85V typical). |
| 7 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WSON-6(2x2) |
| Category | Transistors/Thyristors |
| Pins | 7 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage (BVDSS) | BVDSS | -20 | V | VGS = 0V, ID = -250μA | 3 | ||
| Drain-to-Source Leakage Current | IDSS | -1 | μA | VGS = 0V, VDS = -16V | 3 | ||
| Gate-to-Source Leakage Current | IGSS | -100 | nA | VDS = 0V, VGS = -8V | 3 | ||
| Gate-to-Source Threshold Voltage | VGS(th) | -0.55 | -0.85 | -1.1 | V | VDS = VGS, IDS = -250μA | 3 |
| Drain-to-Source On Resistance | RDS(on) | 59 | 89 | mΩ | VGS = -1.8V, IDS = -5A | 3 | |
| Drain-to-Source On Resistance | RDS(on) | 27 | 32.5 | mΩ | VGS = -2.5V, IDS = -5A | 3 | |
| Drain-to-Source On Resistance | RDS(on) | 19.9 | 23.9 | mΩ | VGS = -4.5V, IDS = -5A | 3 | |
| Input Capacitance | CISS | 504 | 655 | pF | VGS = 0V, VDS = -10V, ƒ = 1MHz | 3 | |
| Output Capacitance | COSS | 281 | 365 | pF | VGS = 0V, VDS = -10V, ƒ = 1MHz | 3 | |
| Reverse Transfer Capacitance | CRSS | 16.7 | 21.7 | pF | VGS = 0V, VDS = -10V, ƒ = 1MHz | 3 | |
| Gate Charge Total (-4.5 V) | Qg | 3.6 | 4.7 | nC | VDS = -10V, IDS = -5A | 3 | |
| Diode Forward Voltage | VSD | -0.8 | -1 | V | IDS = -5A, VGS = 0V | 3 | |
| Drain-to-Source Voltage | VDS | -20 | V | TA = 25°C | 1 | ||
| Gate-to-Source Voltage | VGS | -8 | 8 | V | ±8 V as printed, TA = 25°C | 1 | |
| Continuous Drain Current (package limited) | ID | -20 | A | Limited by package, TA = 25°C | 1 | ||
| Continuous Drain Current | ID | -9.6 | A | Footnote 1: 1 in² 2oz Cu on FR4 PCB, RθJA 43°C/W typical | 1 | ||
| Pulsed Drain Current | IDM | 48 | A | Footnote 2 (pulsed) | 1 | ||
| Power Dissipation | PD | 2.9 | W | TA = 25°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction to Case | RθJC | 4.5 | °C/W | Footnote 1: 1 in² 2oz Cu pad on 1.5 in × 1.5 in FR4 PCB | 4 | ||
| Thermal Resistance Junction to Ambient | RθJA | 55 | °C/W | Mounted on 1 in² of 2oz (0.071mm) Cu | 4 | ||
| Thermal Resistance Junction to Ambient (minimum pad) | RθJA | 215 | °C/W | Minimum pad area of 2oz (0.071mm) Cu | 4 | ||
| Thermal Resistance Junction to Ambient (typical) | RθJA | 43 | °C/W | Footnote 1 on p.1: 1 in² 2oz Cu on FR4 PCB | 1 | ||
| Typical Transient Thermal Impedance Junction to Ambient | RθJA | 170 | °C/W | Min Cu, figure 4-10 note | 6 |
CAD (KiCad official)
- Symbol:
CSD25310Q2T - Footprint:
Package_SON:WSON-6-1EP_2x2mm_P0.65mm_EP1x1.6mm - 3D model: WSON-6(2x2) (KiCad packages3D, STEP)
- 3D model files:
csd25310q2t-etched.step/csd25310q2t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);csd25310q2t.step/csd25310q2t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (15 pp, sha256
835da1be9c2ebc32, retrieved 2026-10-17, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).