component
HSS2N15
Public Made by Adomby adom
HUASHUO MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownHSS2N15
HUASHUO · MOSFETs · SOT-23
HSS2N15 from HUASHUO, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V and threshold 1.0 to 2.5 V at VDS=VGS, ID=250uA. |
| 2 | S | passive | Source; main current terminal, with continuous drain current up to 1.8 A at TA=25℃. |
| 3 | D | passive | Drain; rated for VDS of 150 V and pulsed drain current of 7.2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 150 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | Printed as ±20 | 1 | |
| Continuous Drain Current | ID@TA=25℃ | 1.8 | A | VGS @ 10V, TA=25℃ | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | 1.4 | A | VGS @ 10V, TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 7.2 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.3 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 100 | ℃/W | Note 1: surface mounted on 1 inch FR-4 board with 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 80 | ℃/W | Note 1: surface mounted on 1 inch FR-4 board with 2OZ copper | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 150 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 240 | 280 | mΩ | VGS=10V, ID=2A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 250 | 300 | mΩ | VGS=4.5V, ID=1A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 2 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=150V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 30 | uA | VDS=150V, VGS=0V, TJ=125℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V; printed as ±100 | 2 | |
| Continuous Source Current | IS | 1.8 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSS2N15 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
hss2n15-etched.step/hss2n15-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hss2n15.step/hss2n15.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
690f26bda4683aa2, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).