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Contents

README

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TN2404K-T1-GE3

Vishay Intertech · MOSFETs · SOT-23

TN2404K-T1-GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage limit of ±20 V and a gate-source threshold of 0.8 V min to 2 V max at VDS = VGS, ID = 250 µA.
2 S passive Source of the MOSFET; the body diode forward voltage VSD is 0.8 V typ and 1.2 V max at VGS = 0 V, IS = 0.3 A.
3 D passive Drain of the MOSFET, rated for a drain-source voltage of 240 V and a continuous drain current of 0.2 A at TA = 25 °C for the TN2404K; per the application note this pin also serves as the thermal connection from the package to the PC board.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (absolute maximum) VDS 240 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current (TJ = 150 °C) ID 0.2 A TA = 25 °C, TN2404K column 1
Continuous Drain Current (TJ = 150 °C) ID 0.16 A TA = 70 °C, TN2404K column 1
Pulsed Drain Current IDM 0.8 A t = 300 µs, TN2404K column 1
Maximum Power Dissipation PD 0.36 W TA = 25 °C, TN2404K column 1
Maximum Power Dissipation PD 0.23 W TA = 70 °C, TN2404K column 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Thermal Resistance Junction-to-Ambient RthJA 350 °C/W Surface mounted on FR4 board, TN2404K column; guaranteed by design, not subject to production testing 1
Drain-Source Breakdown Voltage VDS 240 257 V VGS = 0 V, ID = 100 µA 2
Gate-Source Threshold Voltage VGS(th) 0.8 1.65 2 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 192 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 192 V, VGS = 0 V, TJ = 55 °C 2
Drain-Source On-State Resistance RDS(on) 2.2 4 Ω VGS = 10 V, ID = 0.3 A 2
Drain-Source On-State Resistance RDS(on) 2.3 4 Ω VGS = 4.5 V, ID = 0.2 A 2
Drain-Source On-State Resistance RDS(on) 2.4 6 Ω VGS = 2.5 V, ID = 0.1 A 2
Diode Forward Voltage VSD 0.8 1.2 V VGS = 0 V, IS = 0.3 A 2
Total Gate Charge Qg 4.87 8 nC VDS = 192 V, VGS = 10 V, ID = 0.5 A 2
Turn-On Delay Time td(on) 5 10 ns VDD = 60 V, RL = 200 Ω, ID ≈ 0.3 A, VGEN = 10 V, Rg = 25 Ω 2
Rise Time tr 12 20 ns VDD = 60 V, RL = 200 Ω, ID ≈ 0.3 A, VGEN = 10 V, Rg = 25 Ω 2
Turn-Off Delay Time td(off) 35 60 ns VDD = 60 V, RL = 200 Ω, ID ≈ 0.3 A, VGEN = 10 V, Rg = 25 Ω 2
Fall Time tf 16 25 ns VDD = 60 V, RL = 200 Ω, ID ≈ 0.3 A, VGEN = 10 V, Rg = 25 Ω 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper pattern, a plane of copper overlies the drain pin and provides 7

CAD (KiCad official)

  • Symbol: TN2404K-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: tn2404k-t1-ge3-etched.step / tn2404k-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tn2404k-t1-ge3.step / tn2404k-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 0000facdf396b62e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF