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CJ2306

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Changjiang Electronics Tech (CJ) MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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CJ2306

Changjiang Electronics Tech (CJ) · MOSFETs · SOT-23

CJ2306 from Changjiang Electronics Tech (CJ), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the N-channel MOSFET; the device gate-source voltage is rated VGS ±20 V.
2 SOURCE passive Source terminal of the MOSFET; the device source current (diode conduction) is rated IS 0.62 A maximum.
3 DRAIN passive Drain terminal of the MOSFET; the device drain-source voltage is rated VDS 30 V, with continuous drain current ID 3.16 A (TJ=150℃) and pulsed drain current IDM 20 A.

Key specifications

Parameter Value
Manufacturer Changjiang Electronics Tech (CJ)
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 3.16 A TJ=150℃ 1
Pulsed Drain Current IDM 20 A 1
Continuous Source Current (Diode Conduction) IS 0.62 A Diode Conduction 1
Maximum Power Dissipation PD 0.75 W Surface Mounted on 1” ×1” FR4 board, t≤5s 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 100 ℃/W t≤5s 1
Gate-Threshold Voltage VGS(th) 1 3 V VDS =VGS, ID =250µA 2
Gate-Body Leakage IGSS -100 100 nA VDS =0V, VGS =±20V 2
Drain-Source On-Resistance RDS(on) 0.038 0.047 Ω VGS =10V, ID =3.5A 2
Drain-Source On-Resistance RDS(on) 0.052 0.065 Ω VGS =4.5V, ID =2.8A 2
Diode Forward Voltage VSD 0.8 1.2 V IS=1.25A,VGS=0V 2
Gate Charge Qg 3 4.5 nC VDS =15V,VGS =5V,ID =2.5A 2
Total Gate Charge Qgt 6 9 nC 2
Gate Resistance Rg 2.5 5 7.5 Ω f =1.0MHz 2
Turn-On Delay Time td(on) 7 11 ns 2
Rise Time tr 12 18 ns 2
Turn-Off Delay Time td(off) 14 25 ns 2
Fall Time tf 6 10 ns VDD=15V, RL=15Ω, ID ≈1A, VGEN=10V,Rg=6Ω 2
Drain-Source Breakdown Voltage V(BR)DS 30 V VGS = 0V, ID =250µA 2
Zero Gate Voltage Drain Current IDSS 0.5 µA VDS =30V, VGS =0V 2
Forward Transconductance gfs 7 S VDS =4.5V, ID =2.5A 2

CAD (KiCad official)

  • Symbol: CJ2306
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: cj2306-etched.step / cj2306-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cj2306.step / cj2306.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjiang Electronics Tech (CJ) datasheet (2 pp, sha256 070ea829b0ce7a03, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF