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IXFP3N120
Public Made by Adomby adom
IXYS MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIXFP3N120
IXYS · MOSFETs · TO-220-3
IXFP3N120 from IXYS, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGS is rated ±20 V continuous and ±30 V transient, with VGS(th) of 2.5 V min to 5.0 V max at ID = 1.5 mA. |
| 2 | D | passive | Drain (also the TAB); VDSS is 1200 V and continuous drain current ID25 is 3 A at TC = 25°C. |
| 3 | S | passive | Source; continuous source current IS is 3 A and pulsed ISM is 12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | IXYS |
| Package | TO-220-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 1200 | V | TJ = 25°C to 150°C | 1 | ||
| Drain-Gate Voltage | VDGR | 1200 | V | TJ = 25°C to 150°C; RGS = 1 MΩ | 1 | ||
| Gate-Source Voltage Continuous | VGS | -20 | 20 | V | Continuous | 1 | |
| Gate-Source Voltage Transient | VGSM | -30 | 30 | V | Transient | 1 | |
| Drain Current | ID25 | 3 | A | TC = 25°C | 1 | ||
| Pulsed Drain Current | IDM | 12 | A | TC = 25°C, pulse width limited by TJM | 1 | ||
| Avalanche Current | IAR | 3 | A | TC = 25°C | 1 | ||
| Avalanche Energy Repetitive | EAR | 20 | mJ | TC = 25°C | 1 | ||
| Avalanche Energy Single Pulse | EAS | 700 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 10 | V/ns | IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4.7 Ω | 1 | ||
| Power Dissipation | PD | 200 | W | TC = 25°C | 1 | ||
| Junction Temperature | TJ | -55 | 150 | °C | 1 | ||
| Maximum Junction Temperature | TJM | 150 | °C | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | °C | 1 | ||
| Lead Soldering Temperature | TL | 300 | °C | 1.6 mm (0.063 in) from case for 10 s | 1 | ||
| Drain-Source Breakdown Voltage | VDSS | 1200 | V | VGS = 0 V, ID = 1 mA | 1 | ||
| Gate Threshold Voltage | VGS(th) | 2.5 | 5 | V | VDS = VGS, ID = 1.5 mA | 1 | |
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20 VDC, VDS = 0 | 1 | |
| Drain Leakage Current | IDSS | 50 | µA | VDS = VDSS, VGS = 0 V, TJ = 25°C | 1 | ||
| Drain Leakage Current | IDSS | 2 | mA | VDS = VDSS, VGS = 0 V, TJ = 125°C | 1 | ||
| Static Drain-Source On-Resistance | RDS(on) | 4.5 | Ω | VGS = 10 V, ID = 0.5 ID25 | 1 | ||
| Forward Transconductance | gfs | 1.5 | 2.5 | S | VDS = 20 V; ID = 0.5 • ID25, pulse test | 2 | |
| Source Current | IS | 3 | A | VGS = 0 V | 2 | ||
| Pulsed Source Current | ISM | 12 | A | Repetitive; pulse width limited by TJM | 2 | ||
| Diode Forward Voltage | VSD | 1.5 | V | IF = IS, VGS = 0 V, pulse test | 2 | ||
| Reverse Recovery Time | trr | 300 | ns | IF = IS, -di/dt = 100 A/µs, VR = 100 V | 2 | ||
| Thermal Resistance Junction to Case | RthJC | 0.62 | K/W | 2 | |||
| Thermal Resistance Case to Heatsink (TO-220) | RthCK | 0.25 | K/W | TO-220 | 2 | ||
| Input Capacitance | Ciss | 1050 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 100 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 25 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Turn-On Delay Time | td(on) | 17 | ns | VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 4.7 Ω (External) | 2 | ||
| Rise Time | tr | 15 | ns | VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 4.7 Ω (External) | 2 | ||
| Turn-Off Delay Time | td(off) | 32 | ns | VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 4.7 Ω (External) | 2 | ||
| Fall Time | tf | 18 | ns | VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 4.7 Ω (External) | 2 | ||
| Total Gate Charge | Qg(on) | 39 | nC | VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Gate-Source Charge | Qgs | 9 | nC | VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Gate-Drain Charge | Qgd | 22 | nC | VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Reverse Recovery Charge | QRM | 0.4 | µC | IF = IS, -di/dt = 100 A/µs, VR = 100 V | 2 | ||
| Maximum Reverse Recovery Current | IRM | 1.2 | A | IF = IS, -di/dt = 100 A/µs, VR = 100 V | 2 |
CAD (KiCad official)
- Symbol:
IXFP3N120 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files:
ixfp3n120-etched.step/ixfp3n120-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ixfp3n120.step/ixfp3n120.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: IXYS datasheet (4 pp, sha256
01cf6d2b0c5b827f, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).