Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

IGCM04G60HA

Infineon Technologies · Motor Driver ICs · DIP-24

IGCM04G60HA from Infineon Technologies, in a DIP-24. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VS(U) power_in U-phase high side floating IC supply offset voltage, which may swing down to -50V transiently with respect to VSS.
2 VB(U) power_in U-phase high side floating IC supply voltage, with VB to VS recommended at 13.5 to 18.5V and an absolute maximum of 20V.
3 VS(V) power_in V-phase high side floating IC supply offset voltage, which may swing down to -50V transiently with respect to VSS.
4 VB(V) power_in V-phase high side floating IC supply voltage, with VB to VS recommended at 13.5 to 18.5V and an absolute maximum of 20V.
5 VS(W) power_in W-phase high side floating IC supply offset voltage, which may swing down to -50V transiently with respect to VSS.
6 VB(W) power_in W-phase high side floating IC supply voltage, with VB to VS recommended at 13.5 to 18.5V and an absolute maximum of 20V.
7 HIN(U) input U-phase high side positive logic gate driver input with Schmitt-trigger thresholds compatible with 3.3V logic and an internal pull-down of about 5k.
8 HIN(V) input V-phase high side positive logic gate driver input with Schmitt-trigger thresholds compatible with 3.3V logic and an internal pull-down of about 5k.
9 HIN(W) input W-phase high side positive logic gate driver input with Schmitt-trigger thresholds compatible with 3.3V logic and an internal pull-down of about 5k.
10 LIN(U) input U-phase low side positive logic gate driver input with Schmitt-trigger thresholds compatible with 3.3V logic and an internal pull-down of about 5k.
11 LIN(V) input V-phase low side positive logic gate driver input with Schmitt-trigger thresholds compatible with 3.3V logic and an internal pull-down of about 5k.
12 LIN(W) input W-phase low side positive logic gate driver input with Schmitt-trigger thresholds compatible with 3.3V logic and an internal pull-down of about 5k.
13 VDD power_in Low side control supply, operating from 14.0 to 18.5V with 16V typical and an absolute maximum of 20V.
14 VFO output Open-drain fault output that signals under-voltage at VDD or an ITRIP over current event and requires an external pull-up resistor.
15 ITRIP input Over current shutdown input with a positive going threshold of 400 to 540mV referenced to VSS and an absolute maximum input of 10V.
16 VSS power_in Low side control negative supply and reference ground for the logic inputs, which should be connected to N as short as possible.
17 N passive Low side common emitter available for current measurement, with its connection to VSS kept as short as possible.
18 N passive Low side common emitter available for current measurement, with its connection to VSS kept as short as possible.
19 N passive Low side common emitter available for current measurement, with its connection to VSS kept as short as possible.
20 W passive Motor W-phase output connecting the high side emitter and low side collector of the W leg.
21 V power_in Motor V-phase output connecting the high side emitter and low side collector of the V leg.
22 U passive Motor U-phase output connecting the high side emitter and low side collector of the U leg.
23 P power_in Positive bus input voltage for the high side IGBTs, with the bus voltage not to exceed 450V DC.
24 NC unconnected No connection.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package DIP-24
Category Power Management ICs
Pins 24

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage temperature range Tstg -40 125 °C 7
Isolation test voltage VISOL 2000 V RMS, f = 60Hz, t = 1min 7
Operating case temperature range TC -40 125 °C Refer to Figure 6 7
Max. blocking voltage VCES 600 V IC = 250µA 7
DC link supply voltage of P-N VPN 450 V Applied between P-N 7
DC link supply voltage (surge) of P-N VPN(surge) 500 V Applied between P-N 7
Output current IC -4 4 A TC = 25°C, TJ < 150°C 7
Output current IC -2.5 2.5 A TC = 100°C, TJ < 150°C 7
Maximum peak output current IC(peak) -8 8 A less than 1ms 7
Short circuit withstand time tSC 5 µs VDC ≤ 400V, TJ = 150°C 7
Power dissipation per IGBT Ptot 21.8 W 7
Operating junction temperature range TJ -40 150 °C 7
Single IGBT thermal resistance, junction-case RthJC 5.73 K/W 7
Module supply voltage VDD -1 20 V 7
High side floating supply voltage (VB vs. VS) VBS -1 20 V 7
Input voltage LIN, HIN, ITRIP VIN -1 10 V 7
Input voltage ITRIP VITRIP -1 10 V 7
Switching frequency fPWM 20 kHz 7
DC link supply voltage of P-N VPN 0 400 V 8
High side floating supply voltage (VB vs. VS) VBS 13.5 18.5 V 8
Low side supply voltage VDD 14 16 18.5 V 8
Control supply variation ΔVBS, ΔVDD -1 1 V/µs 8
Logic input voltages LIN, HIN, ITRIP VIN 0 5 V 8
Logic input voltage ITRIP VITRIP 0 5 V 8
Between VSS - N (including surge) VSS -5 5 V 8
Collector-Emitter saturation voltage VCE(sat) 1.6 2 V IC = 2.5A, TJ = 25°C 9
Collector-Emitter saturation voltage VCE(sat) 1.8 V IC = 2.5A, TJ = 150°C 9
Emitter-Collector forward voltage VF 1.75 2.2 V IF = 2.5A, TJ = 25°C 9
Emitter-Collector forward voltage VF 1.8 V IF = 2.5A, TJ = 150°C 9
Collector-Emitter leakage current ICES 1 mA VCE = 600V 9
Logic 1 input voltage (LIN, HIN) VIH 2.1 2.5 V 9
Logic 0 input voltage (LIN, HIN) VIL 0.7 0.9 V 9
ITRIP positive going threshold VIT,TH+ 400 470 540 mV 9
ITRIP input hysteresis VIT,HYS 40 70 mV 9
VDD supply under voltage positive going threshold VDDUV+ 10.8 12.1 13 V 9
VBS supply under voltage positive going threshold VBSUV+ 10.8 12.1 13 V 9
VDD supply under voltage negative going threshold VDDUV- 9.5 10.4 11.2 V 9
VBS supply under voltage negative going threshold VBSUV- 9.5 10.4 11.2 V 9
VDD supply under voltage lockout hysteresis VDDUVH 1 1.7 V 9
VBS supply under voltage lockout hysteresis VBSUVH 1 1.7 V 9
Input clamp voltage (HIN, LIN, ITRIP) VINCLAMP 9 10.1 12.5 V Iin = 4mA 9
Quiescent VBx supply current (VBx only) IQBS 300 500 µA HIN = 0V 9
Quiescent VDD supply current (VDD only) IQDD 370 900 µA LIN = 0V, HINX = 5V 9
Input bias current IIN+ 1 1.5 mA VIN = 5V 9
ITRIP input bias current IITRIP+ 65 150 µA VITRIP = 5V 9
Fault clear time after ITRIP-fault tFLTCLR 40 65 200 µs VITRIP = 1V 10
Deadtime between low side and high side DTPWM 1 µs 10
Repetitive peak reverse voltage VRRM 600 V 10
Bootstrap diode resistance of U-phase RBS1 35 Ω VS2 or VS3 = 300V, TJ = 25°C 10
Bootstrap diode resistance of U-phase RBS1 40 Ω VS2 and VS3 = 0V, TJ = 25°C 10
Bootstrap diode resistance of U-phase RBS1 50 Ω VS2 or VS3 = 300V, TJ = 125°C 10
Bootstrap diode resistance of U-phase RBS1 65 Ω VS2 and VS3 = 0V, TJ = 125°C 10

CAD (KiCad official)

  • Symbol: IGCM04G60HA
  • Footprint: Package_DIP:DIP-24_W7.62mm
  • 3D model: DIP-24 (KiCad packages3D, STEP)
  • 3D model files: igcm04g60ha-etched.step / igcm04g60ha-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); igcm04g60ha.step / igcm04g60ha.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (16 pp, sha256 dba15a6fec150fb7, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF