component
AC847BQ-7
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownAC847BQ-7
Diodes Incorporated · Bipolar Transistors - BJT · SOT-23-3
AC847BQ-7 from Diodes Incorporated, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor, shown at the bottom left of the top-view pin-out; the datasheet gives VEBO of 6.0 V for AC847 and 5.0 V for AC848. |
| 2 | E | passive | Emitter of the NPN transistor, shown at the bottom right of the top-view pin-out; the datasheet gives peak emitter current IEM of 200 mA. |
| 3 | C | passive | Collector of the NPN transistor, the single pin at the top of the top-view pin-out; the datasheet gives IC of 100 mA continuous and 200 mA peak, and VCEO of 45 V for AC847 and 30 V for AC848. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 50 | V | IC = 10µA | 4 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 45 | V | IC = 10mA | 4 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 6 | V | IE = 1µA | 4 | ||
| Collector Cutoff Current | ICBO | 15 | nA | VCB = 30V | 4 | ||
| Collector Cutoff Current | ICBO | 5 | µA | VCB = 30V, TJ = +150°C | 4 | ||
| Collector Emitter Cutoff Current | ICES | 15 | nA | VCE= 50V | 4 | ||
| Emitter Base Cutoff Current | IEBO | 100 | nA | VEB= 5V | 4 | ||
| DC Current Gain | hFE | 200 | 290 | 450 | IC = 2.0mA, VCE = 5V | 4 | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 90 | 250 | mV | IC = 10mA, IB = 0.5mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 200 | 600 | mV | IC = 100mA, IB = 5.0mA | 4 | |
| Base-Emitter Turn-On Voltage | VBE(ON) | 580 | 660 | 700 | mV | IC = 2mA, VCE = 5V | 4 |
| Base-Emitter Turn-On Voltage | VBE(ON) | 770 | mV | IC = 10mA, VCE = 5V | 4 | ||
| Transition Frequency | fT | 100 | 300 | MHz | VCE = 5V, IC = 10mA, f = 100MHz | 4 | |
| Noise Figure | NF | 2 | 10 | dB | VCE=5V, IC =200µA, RS =2kΩ, f=1kHz, ∆f=200Hz | 4 | |
| Small Signal Current Gain | hfe | 330 | IC = 2.0mA, VCE = 5V, f=1.0kHz | 4 | |||
| Input Impedance | hie | 4.5 | kΩ | IC = 2.0mA, VCE = 5V, f=1.0kHz | 4 | ||
| Output Admittance | hoe | 30 | µs | IC = 2.0mA, VCE = 5V, f=1.0kHz | 4 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | 700 | mV | IC = 10mA, IB = 0.5mA | 4 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | 900 | mV | IC = 100mA, IB = 5mA | 4 | ||
| Output Capacitance | COBO | 3 | pF | VCB = 10V, f = 1.0MHz | 4 | ||
| Collector-Base Voltage | VCBO | 50 | V | @TA = +25°C | 2 | ||
| Collector-Emitter Voltage | VCEO | 45 | V | @TA = +25°C | 2 | ||
| Emitter-Base Voltage | VEBO | 6 | V | @TA = +25°C | 2 | ||
| Continuous Collector Current | IC | 100 | mA | @TA = +25°C | 2 | ||
| Peak Collector Current | ICM | 200 | mA | @TA = +25°C | 2 | ||
| Peak Emitter Current | IEM | 200 | mA | @TA = +25°C | 2 | ||
| Power Dissipation | PD | 310 | mW | Note 6: minimum recommended pad layout, 1oz copper, FR-4 | 2 | ||
| Power Dissipation | PD | 350 | mW | Note 7: 15mm × 15mm 1oz copper | 2 | ||
| Thermal Resistance, Junction to Ambient | RϴJA | 403 | °C/W | Note 6: minimum recommended pad layout | 2 | ||
| Thermal Resistance, Junction to Ambient | RϴJA | 357 | °C/W | Note 7: 15mm × 15mm 1oz copper | 2 | ||
| Thermal Resistance, Junction to Leads | RϴJL | 350 | °C/W | Note 8 | 2 | ||
| Operating and Storage Temperature Range | TJ,TSTG | -65 | 150 | °C | 2 | ||
| ESD Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A | 2 | ||
| ESD Machine Model | ESD MM | 400 | V | JEDEC Class C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | • Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
AC847BQ-7 - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
ac847bq-7-etched.step/ac847bq-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ac847bq-7.step/ac847bq-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
7bd852389266b22f, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).