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AP2161DM8G-13

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Diodes Incorporated Power Distribution Switches, MSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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AP2161DM8G-13

Diodes Incorporated · Power Distribution Switches · MSOP-8

AP2161DM8G-13 from Diodes Incorporated, in a MSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Ground pin for the device.
2 IN power_in Voltage input pin that must be tied together externally with pin 3; the recommended input voltage range is 2.7 V to 5.5 V.
3 IN power_in Voltage input pin that must be tied together externally with pin 2; the recommended input voltage range is 2.7 V to 5.5 V.
4 EN input Active-low enable input on the AP2161D; logic low is 0 to 0.8 V and logic high is 2 V minimum up to VIN.
5 FLG output Open-drain fault flag output that goes active low on an over-current or over-temperature condition, after a 7 ms (typical) deglitch.
6 OUT power_out Voltage output pin that must be tied together externally with pin 7; the switch output is rated for a recommended maximum continuous load of 1 A.
7 OUT power_out Voltage output pin that must be tied together externally with pin 6; the switch output is rated for a recommended maximum continuous load of 1 A.
8 NC unconnected No internal connection; the datasheet recommends tying this pin to the OUT pins.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package MSOP-8
Category Power Management (PMIC)
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input UVLO VUVLO 1.6 1.9 2.5 V 4
Input Shutdown Current ISHDN 0.5 1 µA Disabled, IOUT = 0 4
Input Quiescent Current IQ 45 70 µA Enabled, IOUT = 0 4
Input Leakage Current ILEAK 0.1 1 µA Disabled, OUT grounded 4
Reverse Leakage Current IREV 0.1 1 µA Disabled, VIN = 0V, VOUT = 5V, IREV at VIN 4
Switch On-Resistance (SOT25, MSOP-8, MSOP-8EP, SO-8) RDS(ON) 95 115 mΩ VIN = 5V, IOUT = 1A, TA = +25°C 4
Switch On-Resistance (SOT25, MSOP-8, MSOP-8EP, SO-8) RDS(ON) 140 mΩ VIN = 5V, IOUT = 1A, -40°C ≤ TA ≤ +85°C 4
Switch On-Resistance (SOT25, MSOP-8, MSOP-8EP, SO-8) RDS(ON) 120 140 mΩ VIN = 3.3V, IOUT = 1A, TA = +25°C 4
Switch On-Resistance (SOT25, MSOP-8, MSOP-8EP, SO-8) RDS(ON) 170 mΩ VIN = 3.3V, IOUT = 1A, -40°C ≤ TA ≤ +85°C 4
Over-Load Current Limit ILIMIT 1.1 1.5 1.9 A VIN = 5V, VOUT = 4.0V, CL = 120µF, -40°C ≤ TA ≤ +85°C 4
EN Input Logic Low Voltage VIL 0.8 V VIN = 2.7V to 5.5V 4
EN Input Logic High Voltage VIH 2 V VIN = 2.7V to 5.5V 4
EN Input Leakage ISINK 1 µA VEN = 5V 4
Output Turn-On Rise Time TR 0.6 1.5 ms CL = 1µF, RLOAD = 10Ω 4
Output Turn-Off Fall Time TF 0.05 0.1 ms CL = 1µF, RLOAD = 10Ω 4
FLG Output FET On-Resistance RFLG 20 40 Ω IFLG = 10mA 4
FLG Blanking Time TBlank 4 7 15 ms CIN = 10µF, CL = 22µF 4
Input Voltage VIN 2.7 5.5 V 3
Output Current IOUT 0 1 A 3
EN Input Logic Low Voltage VIL 0 0.8 V 3
EN Input Logic High Voltage VIH 2 V 3
Operating Ambient Temperature TA -40 85 °C 3
ESD Protection, Human Body Model ESD HBM 4 kV 3
ESD Protection, Machine Model ESD MM 300 V 3
Input Voltage VIN 6.5 V 3
Enable Voltage, Flag Voltage VEN, VFLG 6.5 V 3
Maximum Junction Temperature TJMAX 150 °C 3
Storage Temperature Range TST -65 150 °C Note 4 (Diodes qualified range) 3
Thermal Shutdown Threshold TSHDN 140 °C Enabled, RLOAD = 1kΩ 4
Thermal Shutdown Hysteresis THYS 25 °C 4
Thermal Resistance Junction-to-Ambient, MSOP-8 θJA 118 °C/W Device mounted on FR-4 4 substrate PCB, 2oz copper, with minimum recommended pad layout (Note 6) 4
Short-Circuit Current Limit ISHORT 1.2 A Enabled into short circuit, CL = 22µF 4
Current Limiting Trigger Threshold ITrig 2 A Output Current Slew rate (<100A/s), CL = 22µF 4
Output Turn-On Delay Time TD(ON) 0.05 ms CL = 1µF, RLOAD = 10Ω 4
Output Turn-Off Delay Time TD(OFF) 0.05 ms CL = 1µF, RLOAD = 10Ω 4
Discharge Resistance RDIS 100 Ω VIN = 5V, disabled, IOUT = 1mA 4
Discharge Time TDIS 0.6 ms CL = 1µF, VIN = 5V, disabled to VOUT < 0.5V 4

CAD (KiCad official)

  • Symbol: AP2161DM8G-13
  • Footprint: Package_SO:MSOP-8_3x3mm_P0.65mm
  • 3D model: MSOP-8 (KiCad packages3D, STEP)
  • 3D model files: ap2161dm8g-13-etched.step / ap2161dm8g-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap2161dm8g-13.step / ap2161dm8g-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (19 pp, sha256 efd0e89766d0b027, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF