component
BSC130P03LS G-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSC130P03LS G-VB
VBsemi Elec · MOSFETs · DFN5x6-8
BSC130P03LS G-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, one of three source pins listed on the page 1 pin diagram. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, one of three source pins listed on the page 1 pin diagram. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, one of three source pins listed on the page 1 pin diagram. |
| 4 | G | passive | Gate terminal of the P-channel MOSFET, with gate-source voltage rated at ±20 V in the absolute maximum ratings. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, one of four drain pins listed on the page 1 pin diagram. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, one of four drain pins listed on the page 1 pin diagram. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET, one of four drain pins listed on the page 1 pin diagram. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET, one of four drain pins listed on the page 1 pin diagram. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -60 | A | TC = 25 °C (TJ = 150 °C) | 1 | ||
| Continuous Drain Current | ID | -50.7 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | -47.3 | A | TA = 25 °C | 1 | ||
| Continuous Drain Current | ID | -43.9 | A | TA = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | -150 | A | t = 300 µs | 1 | ||
| Continuous Source-Drain Diode Current | IS | -58 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | -46 | A | TA = 25 °C | 1 | ||
| Single Pulse Avalanche Current | IAS | -40 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 75 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 40 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.1 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 33 | 40 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 15 | 17 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | VDS | -30 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1 | -2.5 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Source Leakage | IGSS | -150 | 150 | µA | VDS = 0 V, VGS = ±25 V | 2 | |
| Gate-Source Leakage | IGSS | -15 | 15 | µA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -20 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.008 | Ω | VGS = -10 V, ID = -13 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.009 | Ω | VGS = -6 V, ID = -10 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.012 | Ω | VGS = -4.5 V, ID = -8 A | 2 | ||
| Gate Resistance | Rg | 0.3 | 1.3 | 2.6 | Ω | f = 1 MHz | 2 |
| Body Diode Voltage | VSD | -0.78 | -1.2 | V | IS = -10 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 35 | 53 | ns | IF = -10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 25 | 38 | nC | IF = -10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
BSC130P03LS G-VB - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
bsc130p03ls-g-vb-etched.step/bsc130p03ls-g-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsc130p03ls-g-vb.step/bsc130p03ls-g-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
23a69f60c65e19a2, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).