component
NCE0140KA
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE0140KA
Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L
NCE0140KA from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V maximum and threshold VGS(th) of 0.9 V min to 1.5 V max at 250 µA. |
| 2 | D | passive | Drain, also the tab; VDS rated 100 V and continuous ID 40 A at TC=25℃ (pulsed IDM 160 A). |
| 3 | S | passive | Source; continuous body-diode forward current IS is 40 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | 110 | V | VGS=0V ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.9 | 1.1 | 1.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (VGS=10V) | RDS(ON) | 12 | 17 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-Source On-State Resistance (VGS=4.5V) | RDS(ON) | 13 | 18 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Forward Transconductance | gFS | 32 | S | VDS=5V,ID=20A | 2 | ||
| Diode Forward Voltage | VSD | 0.85 | 1.2 | V | VGS=0V,IS=20A | 2 | |
| Diode Forward Current | IS | 40 | A | 2 | |||
| Drain-Source Voltage | VDS | 100 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Drain Current-Continuous | ID | 40 | A | TC=25℃ | 1 | ||
| Drain Current-Continuous (TC=100℃) | ID(100℃) | 28 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 160 | A | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 140 | W | TC=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 400 | mJ | Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.07 | ℃/W | Surface Mounted on FR4 Board, t ≤ 10 sec | 1 |
CAD (KiCad official)
- Symbol:
NCE0140KA - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
nce0140ka-etched.step/nce0140ka-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce0140ka.step/nce0140ka.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
825c3e31c6097674, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).