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OSG65R290DEF

Public Made by Adom

by adom

ORIENTAL SEMI MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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OSG65R290DEF

ORIENTAL SEMI · MOSFETs · TO-252-2

OSG65R290DEF from ORIENTAL SEMI, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; control input, VGS rated ±30 V absolute maximum, threshold 2.7 to 3.7 V at ID=250 μA.
2 D passive Drain, also the exposed tab; VDS rated 650 V, continuous ID 15 A at TC=25 °C.
3 S passive Source; continuous body-diode forward current 15 A at TC=25 °C.

Key specifications

Parameter Value
Manufacturer ORIENTAL SEMI
Package TO-252-2
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 650 V 2
Gate-source voltage VGS -30 30 V 2
Continuous drain current ID 15 A TC=25 °C 2
Continuous drain current ID 9.5 A TC=100 °C 2
Pulsed drain current ID, pulse 45 A TC=25 °C 2
Continuous diode forward current IS 15 A TC=25 °C 2
Diode pulsed current IS, pulse 45 A TC=25 °C 2
Power dissipation PD 104 W TC=25 °C 2
Single pulsed avalanche energy EAS 250 mJ 2
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0…480 V 2
Reverse diode dv/dt dv/dt 15 V/ns VDS=0…480 V, ISD≤ID 2
Operation and storage temperature Tstg, Tj -55 150 °C 2
Gate-source leakage current IGSS -100 100 nA VGS=30 V (max); VGS=-30 V (min) 2
Drain-source breakdown voltage BVDSS 650 V VGS=0 V, ID=250 μA 2
Drain-source breakdown voltage at Tj=150 °C BVDSS 700 V VGS=0 V, ID=250 μA, Tj=150 °C 2
Gate threshold voltage VGS(th) 2.7 3.7 V VDS=VGS, ID=250 μA 2
Drain-source on-state resistance RDS(ON) 0.25 0.29 Ω VGS=10 V, ID=7.5 A 2
Drain-source on-state resistance at Tj=150 °C RDS(ON) 0.68 Ω VGS=10 V, ID=7.5 A, Tj=150 °C 2
Drain-source leakage current IDSS 1 μA VDS=650 V, VGS=0 V 2
Diode forward voltage VSD 1.3 V IS=15 A, VGS=0 V 3
Thermal resistance, junction-case RθJC 1.2 °C/W 2
Thermal resistance, junction-ambient RθJA 62 °C/W mounted on 1 in² FR-4 board with 2oz. copper, still air, Ta=25 °C 2

CAD (KiCad official)

  • Symbol: OSG65R290DEF
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: osg65r290def-etched.step / osg65r290def-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); osg65r290def.step / osg65r290def.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ORIENTAL SEMI datasheet (9 pp, sha256 dec40c0cab0d274d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF