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README

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CYPD3171-24LQXQT

Cypress Semicon · USB ICs · QFN-24-EP(4x4)

CYPD3171-24LQXQT from Cypress Semicon, in a QFN-24-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 P1.0 bidirectional Port 1 pin 0 GPIO, also alternate UART_1_CTS, I2C_SDA_1, and TCPWM_line_0, with programmable SCP/OCP/OVP/UVP fault indication.
2 P1.1 bidirectional Port 1 pin 1 GPIO, also alternate UART_1_RTS, I2C_SCL_1, and TCPWM_line_1, with programmable SCP/OCP/OVP/UVP fault indication.
3 VBUS_P_CTRL tri_state Provider (PMOS) FET gate control, 30-V tolerant: 0 = path ON, 1 = path OFF; the driver has an active pull-up and can drive high, low or High-Z.
4 VBUS_C_CTRL tri_state VBUS consumer (PMOS) FET gate control, 30-V tolerant: 0 = path ON, Z = path OFF; the driver can only drive low or High-Z and requires an external pull-up.
5 DP1/P1.2 bidirectional USB D+ for Port 1, also GPIO and UART_1_TX1, with AFC/QC/BC 1.2/Apple charging and No IEC functions.
6 DM1/P1.3 bidirectional USB D- for Port 1, also GPIO and UART_1_RX1, with AFC/QC/BC 1.2/Apple charging and No IEC functions.
7 SWD_DAT_0/P0.0 bidirectional SWD data line and Port 0 pin 0 GPIO (also OVT, I2C_SDA_0, TCPWM_line_0, UART_0_CTS), used for flash programming and debug.
8 SWD_CLK_0/P0.1 input SWD clock line and Port 0 pin 1 GPIO (also OVT, I2C_SCL_0, TCPWM_line_1, UART_0_RTS), used for flash programming and debug.
9 AXRES/P2.0 bidirectional Alternate XRES and Port 2 pin 0 GPIO (also TCPWM_line_0, UART_0_TX0); the pin is internally pulled up during Power-On I/O initialization.
10 P2.1 bidirectional Port 2 pin 1 GPIO, also alternate TCPWM_line_1 and UART_0_RX0.
11 VBUS_C_MON_DISCHARGE passive Type-C VBUS monitor with internal discharge FET; included in the VBUS short protection pins on the ESD list, and its specifications are in Tables 9 and 10.
12 P2.2 bidirectional Port 2 pin 2 GPIO with open-drain and pull-up assist, configurable as GPIO_20VT, I2C_SDA_1, or IEC; tolerant to temporary short to VBUS.
13 P2.3 bidirectional Port 2 pin 3 GPIO with open-drain and pull-up assist, configurable as GPIO_20VT, I2C_SCL_1, or IEC; tolerant to temporary short to VBUS.
14 CC2 bidirectional Type-C communication channel 2 with dead-battery Rd bonding option and IEC protection; tolerant to temporary short to VBUS.
15 CC1 bidirectional Type-C communication channel 1 with dead-battery Rd bonding option and IEC protection; tolerant to temporary short to VBUS.
16 DM0/P3.1 bidirectional USB D- for Port 3, also Port 3 pin 1 GPIO and UART_1_RX0, with AFC/QC/BC 1.2/Apple charging and IEC functions.
17 DP0/P3.0 bidirectional USB D+ for Port 3, also Port 3 pin 0 GPIO and UART_1_TX0, with AFC/QC/BC 1.2/Apple charging and IEC functions.
18 VBUS_IN_DISCHARGE power_in VBUS power input, 3.0 V to 24.5 V, with internal discharge FET; this pin is not supported as a power supply output.
19 CSP input Current sense amplifier positive input (CS+) for the low-side current sense amplifier.
20 FB input Voltage regulation feedback pin for the integrated VBUS regulation circuitry.
21 CATH/COMP passive Cathode of voltage regulation and compensation pin for other applications.
22 GND power_in Ground.
23 VDDD power_in Power input, 2.7 V to 5.5 V; when powered from VBUS_IN_DISCHARGE it is a 3.3-V regulator output that should be decoupled with 1 µF.
24 VCCD passive 1.8-V core voltage pin, not intended for use as a power source.
25 EPAD passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Cypress Semicon
Package QFN-24-EP(4x4)
Category Communication Interface Chip/UART/485/232
Pins 25

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Max supply voltage relative to VSS on VBUS_IN_DISCHARGE and VBUS_C_MON_DISCHARGE pins VBUS_MAX 30 V Absolute max 17
Max supply voltage relative to VSS VDDD_MAX 6 V 17
Max voltage on CC1, CC2 pins and port pins P2.2 and P2.3 for applicable devices VCC_PIN_ABS 22 V 17
GPIO voltage VGPIO_ABS -0.5 V 17
Maximum current per GPIO IGPIO_ABS -25 25 mA 17
GPIO injection current, Max for VIH > VDDD, and Min for VIL < VSS IGPIO_injection -0.5 0.5 mA Absolute max, current injected per pin 17
OVT GPIO voltage VGPIO_OVT_ABS -0.5 6 V Applicable to port pins P0.0 and P0.1 17
Electrostatic discharge human body model ESD_HBM 2200 V 17
Electrostatic discharge charged device model ESD_CDM 500 V 17
Pin current for latch-up LU -100 100 mA 17
Electrostatic discharge IEC61000-4-2 contact discharge ESD_IEC_CON 8000 V Contact discharge on CC1, CC2, VBUS, P2.2 and P2.3 pins 17
Electrostatic discharge IEC61000-4-2 air discharge ESD_IEC_AIR 15000 V Air discharge for DPLUS, DMINUS, CC1, CC2, VBUS, P2.2 and P2.3 pins 17
VDDD Power Supply Input Voltage VDDD 2.7 5.5 V Sink mode, -40 °C to 105 °C TA 17
VDDD Power Supply Input Voltage VDDD 3 5.5 V Source mode, -40 °C to 105 °C TA 17
VBUS_IN Power Supply Input Voltage VBUS_IN 3 24.5 V -40 °C to 105 °C TA 17
Power supply decoupling capacitor for VDDD Cexc 0.8 1 µF X5R ceramic or better 17
CPU input frequency FCPU 48 MHz All VDDD 18
Wakeup from Deep Sleep mode TDEEPSLEEP 35 µs 18
Power-up to Ready to accept I2C/CC command T_PWR_RDY 5 25 ms 18
Total startup time for the regulator supply outputs Tstart 200 µs Guaranteed by Characterization. 28
Integral non-linearity INL -2.5 2.5 LSB Reference voltage generated from VDDD 28
Integral non-linearity INL -1.5 1.5 LSB Reference voltage generated from bandgap 28
Differential non-linearity DNL -2.5 2.5 LSB Reference voltage generated from VDDD 28
Differential non-linearity DNL -1.5 1.5 LSB Reference voltage generated from bandgap 28
Gain error Gain Error -1.5 1.5 LSB 28
ADC reference voltage when generated from band gap. VREF_ADC2 1.96 2 2.04 V Reference voltage generated from bandgap 28
Rate of change of sampled voltage signal SLEW_Max 3 V/ms 28
Row erase time FLASH_ERASE 15.5 ms -40 °C to 85 °C TA, all VDDD 28
Row (Block) write time (erase and program) FLASH_WRITE 20 ms -40 °C to 85 °C TA, all VDDD 28
Row program time after erase FLASH_ROW_PGM 7 ms 25 °C to 55 °C TA, all VDDD 28
Bulk erase time (32 KB) TBULKERASE 35 ms 28
Total device program time TDEVPROG 7.5 s 28
Flash retention FRET1 20 years TA up to 55 °C, 100K P/E cycles 28
Flash retention FRET2 10 years TA up to 85 °C, 10K P/E cycles 28
Flash retention FRET3 3 years TA up to 105 °C, 10K P/E cycles 28
Operating ambient temperature TA -40 25 105 °C Extended Industrial 30
Operating junction temperature TJ -40 25 120 °C Extended Industrial 30
Package junction-to-ambient thermal resistance (24-QFN) TJA 19.98 °C/W 30
Package junction-to-case thermal resistance (24-QFN) TJC 4.78 °C/W 30

CAD (KiCad official)

  • Symbol: CYPD3171-24LQXQT
  • Footprint: Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.6x2.6mm
  • 3D model: QFN-24-EP(4x4), generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.6 mm tall, datasheet A, max). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: cypd3171-24lqxqt-etched.step / cypd3171-24lqxqt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cypd3171-24lqxqt.step / cypd3171-24lqxqt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cypress Semicon datasheet (37 pp, sha256 0cb40f06747905a6, retrieved 2026-11-12, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF