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Contents

README

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RE1E002SPTCL

ROHM Semicon · MOSFETs · SOT-416

RE1E002SPTCL from ROHM Semicon, in a SOT-416. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the P-channel MOSFET, with the body diode between source and drain and the built-in G-S ESD protection diode connected to gate; VGSS is limited to ±20 V.
2 Gate input Gate terminal with built-in G-S protection diode, rated VGSS ±20 V and threshold VGS(th) of -1.0 V to -2.5 V at VDS = -10 V, ID = -1 mA.
3 Drain passive Drain terminal of the P-channel MOSFET, rated VDSS -30 V and continuous ID ±250 mA (pulsed ±500 mA).

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-416
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source voltage VDSS -30 V 1
Continuous drain current ID -250 250 mA 1
Pulsed drain current IDP -500 500 mA Pw≦10μs, Duty cycle≦1% 1
Gate - Source voltage VGSS -20 20 V 1
Power dissipation PD 150 mW Each terminal mounted on a reference land 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction - ambient RthJA 833 ℃/W Each terminal mounted on a reference land 2
Drain - Source breakdown voltage V(BR)DSS -30 V VGS = 0V, ID = -1mA 2
Zero gate voltage drain current IDSS -1 μA VDS = -30V, VGS = 0V 2
Gate - Source leakage current IGSS -10 10 μA VGS = ±20V, VDS = 0V 2
Gate threshold voltage VGS(th) -1 -2.5 V VDS = -10V, ID = -1mA 2
Static drain - source on-state resistance (VGS = -10V, ID = -250mA) RDS(on) 0.9 1.4 Ω VGS = -10V, ID = -250mA 2
Static drain - source on-state resistance (VGS = -4.5V, ID = -150mA) RDS(on) 1.4 2.1 Ω VGS = -4.5V, ID = -150mA 2
Static drain - source on-state resistance (VGS = -4V, ID = -150mA) RDS(on) 1.6 2.4 Ω VGS = -4V, ID = -150mA 2
Static drain - source on-state resistance (Tj = 125℃) RDS(on) 1.2 1.7 Ω VGS = -10V, ID = -250mA, Tj = 125℃ 2
Forward transfer admittance /Yfs/ 200 mS VDS = -10V, ID = -150mA 2
Continuous forward current (body diode) IS 125 mA Ta = 25℃ 3
Pulse forward current (body diode) ISP 500 mA Pw≦10μs, Duty cycle≦1% 3
Forward voltage VSD -1.2 V VGS = 0V, IS = -100mA 3

CAD (KiCad official)

  • Symbol: RE1E002SPTCL
  • Footprint: Package_TO_SOT_SMD:SOT-416
  • 3D model: SOT-416, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: re1e002sptcl-etched.step / re1e002sptcl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); re1e002sptcl.step / re1e002sptcl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (13 pp, sha256 3dbcc58d51778e3a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF