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SI4953ADY-T1-E3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI4953ADY-T1-E3-VB
VBsemi Elec · MOSFETs · SO-8
SI4953ADY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1; VDS rated -30 V. |
| 2 | G1 | input | Gate of P-channel MOSFET 1; VGS limit ±20 V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2; VDS rated -30 V. |
| 4 | G2 | input | Gate of P-channel MOSFET 2; VGS limit ±20 V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2, connected to pins 5 and 6; continuous drain current -7.3 A at TC = 25 °C. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2, connected to pins 5 and 6; continuous drain current -7.3 A at TC = 25 °C. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1, connected to pins 7 and 8; continuous drain current -7.3 A at TC = 25 °C. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1, connected to pins 7 and 8; continuous drain current -7.3 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TJ = 150 °C) | ID | -7.3 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current (TJ = 150 °C) | ID | -7 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current (TJ = 150 °C) | ID | -5.9 | A | TA = 70 °C, notes a, b | 1 | ||
| Pulsed Drain Current | IDM | -32 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | -4.1 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | -2 | A | TA = 25 °C, notes a, b | 1 | ||
| Avalanche Current | IAS | -20 | A | L = 0.1 mH | 1 | ||
| Single-Pulse Avalanche Energy | EAS | 20 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.2 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TA = 25 °C, notes a, b | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TA = 70 °C, notes a, b | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 38 | 50 | °C/W | t ≤ 10 s, notes a, c | 1 | |
| Maximum Junction-to-Ambient (steady state) | RthJA | 85 | °C/W | Steady state, per note c | 1 | ||
| Maximum Junction-to-Foot (steady state) | RthJF | 20 | 25 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage | -30 | V | VGS = 0 V, ID = -250 µA | 2 | |||
| Gate-Source Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -30 | A | VDS ≥ -10 V, VGS = -10 V | 2 | ||
| Total Gate Charge | Qg | 32 | 50 | nC | VDS = -15 V, VGS = -10 V, ID = -6.1 A | 2 | |
| Total Gate Charge | Qg | 15 | 25 | nC | VDS = -15 V, VGS = -4.5 V, ID = -6.1 A | 2 | |
| Turn-On Delay Time | td(on) | 10 | 15 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 8 | 15 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 45 | 70 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 12 | 25 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 42 | 70 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 35 | 60 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 40 | 70 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 16 | 30 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Body Diode Voltage | VSD | -0.75 | -1.2 | V | IS = -2 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 34 | 60 | ns | IF = -2 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 22 | 40 | nC | IF = -2 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
SI4953ADY-T1-E3-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si4953ady-t1-e3-vb-etched.step/si4953ady-t1-e3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si4953ady-t1-e3-vb.step/si4953ady-t1-e3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
0f80c4b15ddb4538, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).