component
PNMT30V6A
Public Made by Adomby adom
Shanghai Prisemi Elec MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPNMT30V6A
Shanghai Prisemi Elec · MOSFETs · SOT-23
PNMT30V6A from Shanghai Prisemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET, rated for a gate-source voltage VGS of ±12 V and designed for direct logic-level (TTL/CMOS) drive. |
| 2 | S | passive | Source of the MOSFET; the datasheet gives no source-specific limit beyond the absolute maximum ratings on page 1. |
| 3 | D | passive | Drain of the MOSFET, rated for a drain-source voltage VDS of 30 V and a drain current ID of 5.8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shanghai Prisemi Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | 30 | V | 1 | |||
| Gate-source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current | ID | 5.8 | A | Absolute maximum rating@25℃ (table header) | 1 | ||
| Pulsed Drain Current | IDM | 30 | A | 1 | |||
| Total Power Dissipation | PD | 1.4 | W | TA=25℃ | 1 | ||
| Total Power Dissipation | PD | 1 | W | TA=75℃ | 1 | ||
| Avalanche Energy, Single Pulse | EAS | 32.68 | mJ | 1 | |||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 30V,VGS = 0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS = ±12V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.6 | 1.5 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 25 | 32 | mΩ | VGS = 10V, ID = 5.8A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 28 | 35 | mΩ | VGS = 4.5V, ID = 5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 35 | 45 | mΩ | VGS = 2.5V, ID = 4A | 2 | |
| Diode Forward Voltage | VSD | 0.71 | 1 | V | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 2 | A | 2 | |||
| Thermal resistance, junction to ambient | Rthja | 159 | C/W | Single Pulse (Fig.6 annotation) | 3 |
CAD (KiCad official)
- Symbol:
PNMT30V6A - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pnmt30v6a-etched.step/pnmt30v6a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pnmt30v6a.step/pnmt30v6a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shanghai Prisemi Elec datasheet (6 pp, sha256
4679cc7721f1a765, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).