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FS4468

Public Made by Adom

by adom

FOSAN MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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Datasheet

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Contents

README

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FS4468

FOSAN · MOSFETs · SOP-8

FS4468 from FOSAN, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied with pins 2 and 3; drain-source breakdown voltage is 30 V minimum.
2 S passive Source of the N-channel MOSFET, tied with pins 1 and 3; continuous drain current is 10 A at TA = 25°C.
3 S passive Source of the N-channel MOSFET, tied with pins 1 and 2; gate-source voltage is rated ±20 V.
4 G input Gate of the N-channel MOSFET with threshold voltage 1.0 V min to 2.0 V max at ID = 250 uA and absolute maximum VGS of ±20 V.
5 D passive Drain of the MOSFET, tied with pins 6, 7 and 8; pulsed drain current is 40 A.
6 D passive Drain of the MOSFET, tied with pins 5, 7 and 8; RDS(ON) is 16 mΩ typ at VGS = 10 V.
7 D passive Drain of the MOSFET, tied with pins 5, 6 and 8; RDS(ON) is 20 mΩ typ at VGS = 4.5 V.
8 D passive Drain of the MOSFET, tied with pins 5, 6 and 7; drain-source voltage is rated 30 V.

Key specifications

Parameter Value
Manufacturer FOSAN
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS 30 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current (continuous) ID 10 A TA = 25°C 1
Drain Current (pulsed) IDM 40 A 1
Total Device Dissipation PTOT 2.8 W TA = 25°C 1
Total Device Dissipation PTOT 1.8 W TA = 70°C 1
Junction/Storage Temperature TJ,Tstg -55 150 °C 1
Thermal Resistance Junction-Ambient RΘJA 48 °C/W 1
Drain-Source Breakdown Voltage BVDSS 30 V ID=250uA, VGS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2 V ID=250uA, VGS=VDS 2
Zero Gate Voltage Drain Current IDSS 1 uA VGS=0V, VDS=24V 2
Gate Body Leakage IGSS 100 nA VGS=+20V, VDS=0V 2
Static Drain-Source On-State Resistance RDS(ON) 16 25 mΩ ID=10A, VGS=10V 2
Static Drain-Source On-State Resistance RDS(ON) 20 30 mΩ ID=8A, VGS=4.5V 2
Diode Forward Voltage Drop VSD 0.7 1.3 V ISD=2A, VGS=0V 2

CAD (KiCad official)

  • Symbol: FS4468
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: fs4468-etched.step / fs4468-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fs4468.step / fs4468.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FOSAN datasheet (5 pp, sha256 e183784c75ab250c, retrieved 2026-10-17, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF