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HYG065N07NS1B

Public Made by Adom

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HUAYI MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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HYG065N07NS1B

HUAYI · MOSFETs · TO-263-2L

HYG065N07NS1B from HUAYI, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V absolute maximum and a threshold of 2 V min to 4 V max at 250 µA.
2 D passive Drain; the middle lead position is cut to a short stub and the drain is also the exposed tab, rated 70 V VDSS and 100 A continuous at Tc=25°C.
3 S passive Source; the power return, with body-diode continuous current rated 100 A at Tc=25°C.

Key specifications

Parameter Value
Manufacturer HUAYI
Package TO-263-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 70 V VGS=0V, IDS=250μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS=70V, VGS=0V 2
Drain-to-Source Leakage Current IDSS 50 μA TJ=125°C 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, IDS=250μA 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 5.5 6.5 mΩ VGS=10V, IDS=40A 2
Diode Forward Voltage VSD 0.9 1.2 V ISD=40A, VGS=0V 2
Drain-Source Voltage VDSS 70 V Tc=25°C (Common Ratings) 2
Gate-Source Voltage VGSS -20 20 V 2
Junction Temperature Range TJ -55 175 °C 2
Storage Temperature Range TSTG -55 175 °C 2
Source Current-Continuous (Body Diode) IS 100 A Tc=25°C, mounted on large heat sink 2
Pulsed Drain Current IDM 330 A Tc=25°C, repetitive rating, pulse width limited by max. junction temperature 2
Continuous Drain Current ID 100 A Tc=25°C 2
Continuous Drain Current ID 70.7 A Tc=100°C 2
Maximum Power Dissipation PD 125 W Tc=25°C 2
Maximum Power Dissipation PD 62.5 W Tc=100°C 2
Single Pulsed-Avalanche Energy EAS 223 mJ L=0.3mH, RG=25Ω, VGS=10V, limited by TJmax, starting TJ=25°C 2
Thermal Resistance, Junction-to-Case RθJC 1.2 °C/W 2
Thermal Resistance, Junction-to-Ambient RθJA 62.5 °C/W Surface mounted on 1in² FR-4 board 2

CAD (KiCad official)

  • Symbol: HYG065N07NS1B
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2L (KiCad packages3D, STEP)
  • 3D model files: hyg065n07ns1b-etched.step / hyg065n07ns1b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hyg065n07ns1b.step / hyg065n07ns1b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAYI datasheet (10 pp, sha256 7ac5d4846e6f31bb, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF