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ZXTN25020BFHTA

Public Made by Adom

by adom

Diodes Incorporated Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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ZXTN25020BFHTA

Diodes Incorporated · Bipolar (BJT) · SOT-23

ZXTN25020BFHTA from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; emitter-base breakdown BVEBO is 7V min (VEBO absolute maximum 7V), base current IB max 1A.
2 E passive Emitter; reverse blocking voltage VECO is 3V maximum, and emitter-base voltage VEBO is 7V maximum.
3 C passive Collector; VCEO 20V, VCBO 50V, VCEX 50V, continuous current IC 4.5A and peak pulse current ICM 10A.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 50 V 2
Collector-emitter voltage (forward blocking) VCEX 50 V 2
Collector-emitter voltage VCEO 20 V 2
Emitter-collector voltage (reverse blocking) VECO 3 V 2
Emitter-base voltage VEBO 7 V 2
Continuous collector current IC 4.5 A footnote (c): mounted on 50mm x 50mm x 1.6mm FR4 PCB, 2 oz copper, still air 2
Base current IB 1 A 2
Peak pulse current ICM 10 A 2
Power dissipation at Tamb = 25°C PD 0.73 W footnote (a): 15mm x 15mm x 1.6mm FR4 PCB, 1 oz copper, still air 2
Power dissipation at Tamb = 25°C PD 1.05 W footnote (b): 25mm x 25mm x 1.6mm FR4 PCB, 2 oz copper, still air 2
Power dissipation at Tamb = 25°C PD 1.25 W footnote (c): 50mm x 50mm x 1.6mm FR4 PCB, 2 oz copper, still air 2
Power dissipation at Tamb = 25°C PD 1.81 W footnote (d): as (c), measured at t < 5 secs 2
Operating and storage temperature range Tj, Tstg -55 150 °C 2
Junction to ambient RJA 171 °C/W footnote (a): 15mm x 15mm x 1.6mm FR4 PCB, 1 oz copper, still air 2
Junction to ambient RJA 119 °C/W footnote (b): 25mm x 25mm x 1.6mm FR4 PCB, 2 oz copper, still air 2
Junction to ambient RJA 100 °C/W footnote (c): 50mm x 50mm x 1.6mm FR4 PCB, 2 oz copper, still air 2
Junction to ambient RJA 69 °C/W footnote (d): as (c), measured at t < 5 secs 2
Collector-base breakdown voltage BVCBO 50 90 V IC = 100A 4
Collector-emitter breakdown voltage (forward blocking) BVCEX 50 90 V IC = 100A, RBE < 1k or -1V < VBE < 0.25V 4
Collector-emitter breakdown voltage (base open) BVCEO 20 27 V IC = 10mA (*) pulsed 4
Emitter-base breakdown voltage BVEBO 7 8 V IE = 100A 4
Emitter-collector breakdown voltage (reverse blocking) BVECX 6 7 V IE = 100A, RBC < 1k or 0.25V > VBC > -0.25V 4
Emitter-collector breakdown voltage (base open) BVECO 3 4.7 V IE = 100A 4
Collector-base cut-off current ICBO 50 nA VCB = 40V 4
Collector-base cut-off current ICBO 20 A VCB = 40V, Tamb = 100°C 4
Collector-emitter cut-off current ICEX 100 nA VCE = 40V; RBE < 1k or -1V < VBE < 0.25V 4
Emitter-base cut-off current IEBO 50 nA VEB = 5.6V 4
Collector-emitter saturation voltage VCE(sat) 35 45 mV IC = 1A, IB = 100mA (*) 4
Collector-emitter saturation voltage VCE(sat) 55 80 mV IC = 1A, IB = 20mA (*) 4
Collector-emitter saturation voltage VCE(sat) 90 115 mV IC = 2A, IB = 40mA (*) 4
Collector-emitter saturation voltage VCE(sat) 175 240 mV IC = 4.5A, IB = 90mA (*) 4
Collector-emitter saturation voltage VCE(sat) 120 145 mV IC = 4.5A, IB = 450mA (*) 4
Base-emitter saturation voltage VBE(sat) 910 1000 mV IC = 4.5A, IB = 90mA (*) 4
Base-emitter turn-on voltage VBE(on) 825 900 mV IC = 4.5A, VCE = 2V (*) 4
Static forward current transfer ratio hFE 100 200 300 IC = 10mA, VCE = 2V (*) 4
Static forward current transfer ratio hFE 100 210 IC = 1A, VCE = 2V (*) 4
Static forward current transfer ratio hFE 75 160 IC = 4.5A, VCE = 2V (*) 4
Static forward current transfer ratio hFE 30 70 IC = 10A, VCE = 2V (*) 4
Transition frequency fT 185 MHz IC = 50mA, VCE = 10V, f = 100MHz 4
Output capacitance COBO 22.7 30 pF VCB = 10V, f = 1MHz (*) 4
Delay time td 87 ns VCC = 10V. IC = 1A, IB1 = IB2 = 10mA. 4
Rise time tr 119 ns VCC = 10V. IC = 1A, IB1 = IB2 = 10mA. 4
Storage time ts 146 ns VCC = 10V. IC = 1A, IB1 = IB2 = 10mA. 4
Fall time tf 61 ns VCC = 10V. IC = 1A, IB1 = IB2 = 10mA. 4

CAD (KiCad official)

  • Symbol: ZXTN25020BFHTA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: zxtn25020bfhta-etched.step / zxtn25020bfhta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxtn25020bfhta.step / zxtn25020bfhta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 09935f9a47e4de2f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF