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Contents

README

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SBAV199LT1G

onsemi · Switching Diodes · SOT-23-3

SBAV199LT1G from onsemi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE passive Anode of the first diode in the dual series pair; the datasheet gives a device reverse voltage of 70 Vdc and a forward current of 215 mAdc, with ratings stated for each diode.
2 CATHODE passive Cathode of the second diode in the dual series pair; the datasheet gives a device reverse voltage of 70 Vdc and a forward current of 215 mAdc, with ratings stated for each diode.
3 CATHODE/ANODE passive Shared common connection that joins the cathode of one diode to the anode of the other in the series configuration; the datasheet gives no separate limit for this pin.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23-3
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Voltage VR 70 Vdc 1
Repetitive Peak Reverse Voltage VRRM 70 Vdc 1
Forward Current IF 215 mAdc 1
Peak Forward Surge Current IFM(surge) 500 mAdc 1
Average Rectified Forward Current (Averaged Over Any 20 ms Period) IF(AV) 715 mAdc Note 1 1
Repetitive Peak Forward Current IFRM 450 mAdc 1
Non-Repetitive Peak Forward Current IFSM 2 Adc t = 1.0 s (printed label order; see review_required) 1
Non-Repetitive Peak Forward Current IFSM 1 Adc t = 1.0 ms (printed label order; see review_required) 1
Non-Repetitive Peak Forward Current IFSM 0.5 Adc t = 1.0 s (printed label order; see review_required) 1
Total Device Dissipation, FR-5 Board (Note 1), TA = 25°C PD 225 mW FR-5 Board (Note 1), TA = 25°C 1
Total Device Dissipation, Alumina Substrate (Note 2), TA = 25°C PD 300 mW Alumina Substrate (Note 2), TA = 25°C 1
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RJA 556 °C/W FR-5 Board (Note 1) 1
Thermal Resistance, Junction-to-Ambient (Alumina Substrate) RJA 417 °C/W Alumina Substrate (Note 2) 1
Junction and Storage Temperature TJ, Tstg -65 150 °C 1
Reverse Breakdown Voltage V(BR) 70 Vdc I(BR) = 100 Adc (micro sign as printed in text) 2
Reverse Voltage Leakage Current IR 5 nAdc VR = 70 Vdc 2
Reverse Voltage Leakage Current IR 80 nAdc VR = 70 Vdc, TJ = 150°C 2
Diode Capacitance CD 2 pF VR = 0 V, f = 1.0 MHz 2
Forward Voltage VF 900 mVdc IF = 1.0 mAdc 2
Forward Voltage VF 1000 mVdc IF = 10 mAdc 2
Forward Voltage VF 1100 mVdc IF = 50 mAdc 2
Forward Voltage VF 1250 mVdc IF = 150 mAdc 2
Reverse Recovery Time trr 3 s IF = IR = 10 mAdc (Figure 1) 2

CAD (KiCad official)

  • Symbol: SBAV199LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: sbav199lt1g-etched.step / sbav199lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sbav199lt1g.step / sbav199lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 4b6338d532a4ebbe, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF