component
MMBT5401-B
Public Made by Adomby adom
Foshan Blue Rocket Elec Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBT5401-B
Foshan Blue Rocket Elec · Bipolar (BJT) · SOT-23
MMBT5401-B from Foshan Blue Rocket Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the silicon PNP transistor; the datasheet gives the emitter-to-base voltage rating as VEBO -6.0 V. |
| 2 | Emitter | passive | Emitter terminal of the silicon PNP transistor; the datasheet gives the collector current rating as IC -600 mA. |
| 3 | Collector | passive | Collector terminal of the silicon PNP transistor; the datasheet gives the collector-to-emitter voltage rating as VCEO -160 V and collector power dissipation as PC 300 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Base Voltage | VCBO | -180 | V | 2 | |||
| Collector to Emitter Voltage | VCEO | -160 | V | 2 | |||
| Emitter to Base Voltage | VEBO | -6 | V | 2 | |||
| Collector Current | IC | -600 | mA | 2 | |||
| Base Current | IB | -300 | mA | 2 | |||
| Collector Power Dissipation | PC | 300 | mW | 2 | |||
| Junction Temperature | Tj | 150 | ℃ | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 2 | ||
| Collector Cut-Off Current | ICBO | -0.1 | μA | VCB=-180V IE=0 | 2 | ||
| Emitter Cut-Off Current | IEBO | -0.1 | μA | VEB=-6.0V IC=0 | 2 | ||
| DC Current Gain hFE(1) | hFE(1) | 50 | 200 | 400 | VCE=-5.0V IC=-10mA | 2 | |
| DC Current Gain hFE(2) | hFE(2) | 20 | 70 | VCE=-5.0V IC=-50mA | 2 | ||
| DC Current Gain hFE(3) | hFE(3) | 40 | 180 | VCE=-5.0V IC=-1.0mA | 2 | ||
| Collector-Emitter Saturation Voltage VCE(sat)(1) | VCE(sat)(1) | -0.12 | -0.4 | V | IC=-10mA IB=-1.0mA | 2 | |
| Collector-Emitter Saturation Voltage VCE(sat)(2) | VCE(sat)(2) | -0.5 | -0.8 | V | IC=-50mA IB=-5.0mA | 2 | |
| Base-Emitter Saturation Voltage VBE(sat)(1) | VBE(sat)(1) | -0.75 | -1 | V | IC=-10mA IB=-1.0mA | 2 | |
| Base-Emitter Saturation Voltage VBE(sat)(2) | VBE(sat)(2) | -0.8 | -1 | V | IC=-50mA IB=-5.0mA | 2 | |
| Base-Emitter Voltage | VBE | -0.7 | -0.75 | V | VCE=-5.0V IC=-10mA | 2 | |
| Transition Frequency | fT | 50 | 80 | MHz | VCE=-10V IC=-10mA | 2 | |
| Collector Output Capacitance | Cob | 2.5 | 5 | pF | VCB=-10V IE=0 f=10MHz | 2 | |
| Turn-on Time | ton | 0.1 | μs | IC=-100mA -IB1=IB2=-10mA | 2 | ||
| Storage Time | toff | 0.2 | μs | 2 | |||
| Fall Time | tstg | 0.1 | μs | 2 |
CAD (KiCad official)
- Symbol:
MMBT5401-B - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbt5401-b-etched.step/mmbt5401-b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt5401-b.step/mmbt5401-b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256
49ec44d0e692ae29, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).