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SI1902CDL-T1-GE3

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Vishay Intertech MOSFETs, SC-70-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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SI1902CDL-T1-GE3

Vishay Intertech · MOSFETs · SC-70-6

SI1902CDL-T1-GE3 from Vishay Intertech, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1; continuous source-drain diode current is 0.35 A at TC = 25 °C.
2 G1 input Gate of N-channel MOSFET 1; gate-source voltage limit is ±12 V, with threshold 0.6 to 1.5 V.
3 D2 passive Drain of N-channel MOSFET 2; VDS max 20 V and continuous drain current 1.1 A at TC = 25 °C.
4 S2 passive Source of N-channel MOSFET 2; continuous source-drain diode current is 0.35 A at TC = 25 °C.
5 G2 input Gate of N-channel MOSFET 2; gate-source voltage limit is ±12 V, with threshold 0.6 to 1.5 V.
6 D1 passive Drain of N-channel MOSFET 1; VDS max 20 V and continuous drain current 1.1 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SC-70-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 20 V 1
Gate-source voltage VGS -12 12 V 1
Continuous drain current ID 1.1 A TJ = 150 °C, TC = 25 °C 1
Continuous drain current ID 0.9 A TJ = 150 °C, TC = 70 °C 1
Continuous drain current ID 1 A TJ = 150 °C, TA = 25 °C 1
Continuous drain current ID 0.8 A TJ = 150 °C, TA = 70 °C 1
Pulsed drain current IDM 2 A t = 300 μs 1
Continuous source-drain diode current IS 0.35 A TC = 25 °C 1
Continuous source-drain diode current IS 0.25 A TA = 25 °C 1
Maximum power dissipation PD 0.42 W TC = 25 °C 1
Maximum power dissipation PD 0.27 W TC = 70 °C 1
Maximum power dissipation PD 0.3 W TA = 25 °C 1
Maximum power dissipation PD 0.23 W TA = 70 °C 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Maximum junction-to-ambient RthJA 290 350 °C/W t ≤ 5 s 1
Maximum junction-to-foot (drain) RthJF 250 300 °C/W Steady state 1
Drain-source breakdown voltage VDS 20 V VGS = 0 V, ID = 250 μA 2
Gate-source threshold voltage VGS(th) 0.6 1.5 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Zero gate voltage drain current IDSS 1 μA VDS = 20 V, VGS = 0 V 2
Zero gate voltage drain current IDSS 10 μA VDS = 20 V, VGS = 0 V, TJ = 85 °C 2
On-state drain current ID(on) 2 A VDS ≥ 5 V, VGS = 4.5 V 2
Drain-source on-state resistance RDS(on) 0.195 0.235 Ω VGS = 4.5 V, ID = 1 A 2
Drain-source on-state resistance RDS(on) 0.255 0.306 Ω VGS = 2.5 V, ID = 0.3 A 2
Total gate charge Qg 2 3 nC VDS = 10 V, VGS = 10 V, ID = 1 A 2
Total gate charge Qg 0.9 1.4 nC VDS = 10 V, VGS = 4.5 V, ID = 1 A 2
Gate resistance Rg 2.4 12 24 Ω f = 1 MHz 2
Turn-on delay time td(on) 4 8 ns VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 10 V, Rg = 1 Ω 2
Rise time tr 13 20 ns VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-off delay time td(off) 11 20 ns VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 10 V, Rg = 1 Ω 2
Fall time tf 9 18 ns VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-on delay time td(on) 6 12 ns VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise time tr 16 24 ns VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-off delay time td(off) 13 20 ns VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall time tf 10 20 ns VDD = 10 V, RL = 12.5 Ω, ID 0.8 A, VGEN = 4.5 V, Rg = 1 Ω 2
Continuous source-drain diode current IS 0.35 A TC = 25 °C 2
Pulse diode forward current ISM 2 A 2
Body diode voltage VSD 0.8 1.2 V IS = 0.8 A 2
Body diode reverse recovery time trr 2 4 nC IF = 0.8 A, di/dt = 100 A/μs 2
Body diode reverse recovery charge Qrr 8 16 nC IF = 0.8 A, di/dt = 100 A/μs 2
VDS temperature coefficient VDS/TJ 25 mV/°C ID = 250 μA 2
VGS(th) temperature coefficient VGS(th)/TJ -2.6 mV/°C 2
Forward transconductance gfs 3 ms VDS = 10 V, ID = 1 A 2
Input capacitance Ciss 62 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Output capacitance Coss 20 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Reverse transfer capacitance Crss 7 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Gate-source charge Qgs 0.2 nC 2
Gate-drain charge Qgd 0.2 nC 2
Reverse recovery fall time ta 5 ns 2
Reverse recovery rise time tb 3 ns 2

CAD (KiCad official)

  • Symbol: SI1902CDL-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SC-70-6 (KiCad packages3D, STEP)
  • 3D model files: si1902cdl-t1-ge3-etched.step / si1902cdl-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si1902cdl-t1-ge3.step / si1902cdl-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (11 pp, sha256 2c9a5d8705ab96d6, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF