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Contents

README

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SP010N04BGTH

Siliup · MOSFETs · TO-252

SP010N04BGTH from Siliup, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, rated VGSS ±20 V, with threshold VGS(th) of 1.0 V min, 1.7 V typ, 3 V max at 250 µA.
2 D passive Drain of the N-channel MOSFET, rated VDSS 100 V with continuous drain current ID 120 A at Tc=25°C (80 A at Tc=100°C).
3 S passive Source of the N-channel MOSFET; body diode has forward voltage VSD of 1.2 V max at IS=1 A and continuous diode current IS of 120 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-252
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: SP010N04BGTH
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sp010n04bgth-etched.step / sp010n04bgth-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp010n04bgth.step / sp010n04bgth.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (6 pp, sha256 f7c921be9763fc0d, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF