component
BYV10X-600PQ
Public Made by Adomby adom
WeEn Semiconductors Diodes - General Purpose, TO-220-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBYV10X-600PQ
WeEn Semiconductors · Diodes - General Purpose · TO-220-2
BYV10X-600PQ from WeEn Semiconductors, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the ultrafast diode; rated for 600 V DC reverse voltage (VR) and 10 A average forward current. |
| 2 | A | passive | Anode of the ultrafast diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WeEn Semiconductors |
| Package | TO-220-2 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | 600 | V | 3 | |||
| Crest working reverse voltage | VRWM | 600 | V | 3 | |||
| Reverse voltage | VR | 600 | V | DC | 3 | ||
| Average forward current | IF(AV) | 10 | A | δ = 0.5; Th ≤ 71 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 | 3 | ||
| Repetitive peak forward current | IFRM | 20 | A | δ = 0.5; tp = 25 µs; Th ≤ 71 °C; square-wave pulse | 3 | ||
| Non-repetitive peak forward current | IFSM | 80 | A | tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 | 3 | ||
| Non-repetitive peak forward current | IFSM | 88 | A | tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse | 3 | ||
| Storage temperature | Tstg | -65 | 175 | °C | 3 | ||
| Junction temperature | Tj | 175 | °C | 3 | |||
| Forward voltage | VF | 1.5 | 2 | V | IF = 10 A; Tj = 25 °C; Fig. 6 | 6 | |
| Forward voltage | VF | 1.6 | V | IF = 10 A; Tj = 150 °C; Fig. 6 | 6 | ||
| Reverse current | IR | 10 | µA | VR = 600 V; Tj = 25 °C | 6 | ||
| Reverse current | IR | 250 | µA | VR = 500 V; Tj = 150 °C | 6 | ||
| Reverse recovery time | trr | 35 | 50 | ns | IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs; Tj = 25 °C; Fig. 7 | 6 | |
| Thermal resistance junction to heatsink | Rth(j-h) | 7.2 | K/W | without heatsink compound | 5 | ||
| Thermal resistance junction to heatsink | Rth(j-h) | 5.5 | K/W | with heatsink compound; Fig. 5 | 5 | ||
| RMS isolation voltage | Visol(RMS) | 2500 | V | 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free | 5 | ||
| Reverse recovery time | trr | 20 | ns | IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; Fig. 7 | 6 | ||
| Reverse recovery time | trr | 40 | ns | IF = 10 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 25 °C; Fig. 7 | 6 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 55 | K/W | in free air | 5 | ||
| Isolation capacitance | Cisol | 10 | pF | from cathode to external heatsink | 5 |
CAD (KiCad official)
- Symbol:
BYV10X-600PQ - Footprint:
Package_TO_SOT_THT:TO-220-2_Vertical - 3D model: TO-220-2 (KiCad packages3D, STEP)
- 3D model files:
byv10x-600pq-etched.step/byv10x-600pq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);byv10x-600pq.step/byv10x-600pq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WeEn Semiconductors datasheet (10 pp, sha256
9f6cd06c0adc6f84, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).