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Contents

README

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CR10N65FA9K

CRMICRO · MOSFETs · TO-220F-3

CR10N65FA9K from CRMICRO, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±30 V maximum, threshold VGS(TH) 2.0 to 4.0 V at ID = 250 µA.
2 D passive Drain; rated VDSS 600 V and continuous drain current 10 A at TC = 25 °C.
3 S passive Source; the body diode continuous source current is 10 A maximum.

Key specifications

Parameter Value
Manufacturer CRMICRO
Package TO-220F-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 600 V Tc=25℃ 1
Continuous Drain Current ID 10 A Tc=25℃ 1
Continuous Drain Current ID 6.3 A TC = 100 °C 1
Pulsed Drain Current IDM 40 A Repetitive rating; pulse width limited by maximum junction temperature 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy EAS 580 mJ L=10mH, ID=10A, Start TJ=25℃ 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns ISD=10A, di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃ 1
Power Dissipation PD 40 W Tc=25℃ 1
Derating Factor above 25°C 0.32 W/℃ 1
Operating Junction Temperature TJ 150 ℃ 1
Storage Temperature Range Tstg -55 150 ℃ 1
Maximum Temperature for Soldering TL 300 ℃ 1
Drain to Source Breakdown Voltage VDSS 600 V VGS=0V, ID=250µA 2
Bvdss Temperature Coefficient ΔBVDSS/ΔTJ 0.67 V/℃ ID=250uA, Reference 25℃ 2
Drain to Source Leakage Current IDSS 1 µA VDS=600V, VGS=0V, TJ=25℃ 2
Drain to Source Leakage Current IDSS 100 µA VDS=480V, VGS=0V, TJ=125℃ 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS=+30V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS=-30V 2
Drain-to-Source On-Resistance RDS(ON) 0.68 0.9 Ω VGS=10V, ID=5A 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250µA 2
Forward Transconductance gfs 9.5 S VDS=15V, ID=5A 2
Input Capacitance Ciss 1530 pF VGS=0V, VDS=25V, f=1.0MHz 2
Output Capacitance Coss 116 pF VGS=0V, VDS=25V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 4.9 pF VGS=0V, VDS=25V, f=1.0MHz 2
Turn-on Delay Time td(ON) 26 ns ID=10A, VDD=300V, RG=10Ω 2
Rise Time tr 23 ns ID=10A, VDD=300V, RG=10Ω 2
Turn-Off Delay Time td(OFF) 49 ns ID=10A, VDD=300V, RG=10Ω 2
Fall Time tf 27 ns ID=10A, VDD=300V, RG=10Ω 2
Total Gate Charge Qg 31 nC ID=10A, VDD=480V, VGS=10V 2
Gate to Source Charge Qgs 7 nC ID=10A, VDD=480V, VGS=10V 2
Gate to Drain (Miller) Charge Qgd 12 nC ID=10A, VDD=480V, VGS=10V 2
Continuous Source Current (Body Diode) IS 10 A 3
Maximum Pulsed Current (Body Diode) ISM 40 A 3
Diode Forward Voltage VSD 1.5 V IS=10A, VGS=0V 3
Reverse Recovery Time trr 1010 ns IS=10A, Tj=25℃, dIF/dt=100A/us, VGS=0V 3
Reverse Recovery Charge Qrr 5150 nC IS=10A, Tj=25℃, dIF/dt=100A/us, VGS=0V 3
Reverse Recovery Current IRRM 13.5 A IS=10A, Tj=25℃, dIF/dt=100A/us, VGS=0V 3
Junction-to-Case Thermal Resistance RθJC 3.13 ℃/W 3
Junction-to-Ambient Thermal Resistance RθJA 62.5 ℃/W 3

CAD (KiCad official)

  • Symbol: CR10N65FA9K
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CRMICRO datasheet (6 pp, sha256 c97e930a6fd71679, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF