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Contents

README

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NDT456P

UMW · MOSFETs · SOT-223

NDT456P from UMW, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the P-channel MOSFET; gate-source voltage is rated ±20 V (VGSS).
2 D passive DRAIN terminal; drain-source voltage is rated -30 V (VDSS) with continuous drain current of -7.5 A, and the solder mounting surface of the drain pins is the thermal reference for RθJA.
3 S passive SOURCE terminal of the P-channel MOSFET, the reference for the ±20 V gate-source rating and the -30 V drain-source rating.

Key specifications

Parameter Value
Manufacturer UMW
Package SOT-223
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V ID=-250µA, VGS=0V 3
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-24V, VGS=0V 3
Zero Gate Voltage Drain Current IDSS -10 µA VDS=-24V, VGS=0V, TJ=55°C 3
Gate-Body Leakage, Forward IGSSF 100 nA VGS=20V, VDS=0V 3
Gate-Body Leakage, Reverse IGSSR -100 nA VGS=-20V, VDS=0V 3
Gate Threshold Voltage VGS(th) -1 -1.5 -3 V VDS=VGS, ID=-250µA 3
Static Drain-Source On-Resistance RDS(ON) 25 mΩ VGS=-10V, ID=-7.5A 3
Static Drain-Source On-Resistance RDS(ON) 30 mΩ VGS=-4.5V, ID=-6A 3
On-State Drain Current ID(ON) -10 A VGS=-10V, VDS=-5V 3
On-State Drain Current ID(ON) -2.5 A VGS=-4.5V, VDS=-5V 3
Maximum Continuous Drain-Source Diode Forward Current IS -2.5 A 3
Drain-Source Diode Forward Voltage VSD -0.85 -1.2 V VGS=0V, IS=-2.5A (Note 2) 3
Drain-Source Voltage VDSS -30 V 1
Gate-Source Voltage VGSS -20 20 V 1
Drain Current - Continuous ID -7.5 A Note 1a 1
Drain Current - Pulsed -20 20 A 1
Power Dissipation for Single Operation PD 3 W Note 1a 1
Power Dissipation for Single Operation PD 1.3 W Note 1b 1
Power Dissipation for Single Operation PD 1.1 W Note 1c 1
Storage Temperature Range TJ, TSTG -65 150 °C 1
Thermal Resistance, Junction-to-Ambient RθJA 42 °C/W Note 1a 2
Thermal Resistance, Junction-to-Case RθJC 12 °C/W Note 1 2

CAD (KiCad official)

  • Symbol: NDT456P
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: ndt456p-etched.step / ndt456p-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ndt456p.step / ndt456p.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 d957787e80338b0a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF