component
HYG030N03LQ1B
Public Made by Adomby adom
HUAYI MOSFETs, TO-263-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHYG030N03LQ1B
HUAYI · MOSFETs · TO-263-2L
HYG030N03LQ1B from HUAYI, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal with a maximum gate-source voltage of ±20 V and a typical gate threshold of 1.3 V (1.0 to 3.0 V). |
| 2 | D | passive | Drain terminal, also the exposed tab, rated for 30 V drain-source voltage and 100 A continuous drain current at Tc=25°C. |
| 3 | S | passive | Source terminal, rated for 100 A continuous source current through the body diode at Tc=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUAYI |
| Package | TO-263-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
HYG030N03LQ1B - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263-2L (KiCad packages3D, STEP)
- 3D model files:
hyg030n03lq1b-etched.step/hyg030n03lq1b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hyg030n03lq1b.step/hyg030n03lq1b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUAYI datasheet (10 pp, sha256
f1efee81589b48ca, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).