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S8050M-C

Public Made by Adom

by adom

Foshan Blue Rocket Elec Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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S8050M-C

Foshan Blue Rocket Elec · Bipolar (BJT) · SOT-23

S8050M-C from Foshan Blue Rocket Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base of the NPN transistor; the datasheet gives Base Current IB as 200 mA (absolute maximum) and VEBO as 6.0 V.
2 Emitter passive Emitter of the NPN transistor; the datasheet gives Emitter to Base voltage VEBO as 6.0 V and Collector Current IC as 800 mA (absolute maximum).
3 C passive Collector of the NPN transistor; the datasheet gives Collector to Base voltage VCBO as 40 V, Collector to Emitter voltage VCEO as 25 V, Collector Current IC as 800 mA and Collector Power Dissipation PC as 450 mW (absolute maximum).

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Base Voltage VCBO 40 V Ta=25℃ 2
Collector to Emitter Voltage VCEO 25 V Ta=25℃ 2
Emitter to Base Voltage VEBO 6 V Ta=25℃ 2
Collector Current IC 800 mA Ta=25℃ 2
Base Current IB 200 mA Ta=25℃ 2
Collector Power Dissipation PC 450 mW Ta=25℃ 2
Junction Temperature Tj 150 ℃ 2
Storage Temperature Range Tstg -55 150 ℃ 2
Collector to Base Breakdown Voltage VCBO 40 V IC=0.1mA IE=0 2
Collector to Emitter Breakdown Voltage VCEO 25 V IC=2.0mA IB=0 2
Emitter to Base Breakdown Voltage VEBO 6 V IE=0.1mA IC=0 2
Collector Cut-Off Current ICBO 0.1 μA VCB=35V IE=0 2
Emitter Cut-Off Current IEBO 0.1 μA VEB=6.0V IC=0 2
DC Current Gain hFE(1) hFE(1) 85 300 VCE=1.0V IC=100mA 2
DC Current Gain hFE(2) hFE(2) 40 VCE=1.0V IC=500mA 2
DC Current Gain hFE(3) hFE(3) 45 VCE=1.0V IC=5.0mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.28 0.5 V IC=500mA IB=50mA 2
Base-Emitter Saturation Voltage VBE(sat) 0.98 1.2 V IC=500mA IB=50mA 2
Base-Emitter Voltage VBE 0.66 1 V VCE=1.0V IC=10mA 2
Transition Frequency fT 100 190 MHz VCE=10V IC=50mA 2
Collector Output Capacitance Cob 9 pF VCB=10V IE=0 f=1.0MHz 2
DC Current Gain hFE classification C (suffix -C) hFE 120 200 1

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Base Current IB 200 mA Collector Power Dissipation PC 450 mW 2

CAD (KiCad official)

  • Symbol: S8050M-C
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: s8050m-c-etched.step / s8050m-c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s8050m-c.step / s8050m-c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256 07b7089a1fb615a4, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF