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Contents

README

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SI7145DP-T1-GE3-HXY

HXY MOSFET · MOSFETs · DFN5x6-8L

SI7145DP-T1-GE3-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET, rated for a continuous source current of -100 A (Pin 1 marker shown on the package drawing).
2 S passive Source terminal of the P-channel MOSFET, rated for a continuous source current of -100 A.
3 S passive Source terminal of the P-channel MOSFET, rated for a continuous source current of -100 A.
4 G input Gate terminal, rated for VGS of ±20 V and specified for operation with gate drive as low as 4.5 V.
5 D passive Drain terminal, rated for VDS of -30 V and continuous drain current of -100 A at TC=25℃.
6 D passive Drain terminal, rated for VDS of -30 V and continuous drain current of -100 A at TC=25℃.
7 D passive Drain terminal, rated for VDS of -30 V and continuous drain current of -100 A at TC=25℃.
8 D passive Drain terminal, rated for VDS of -30 V and continuous drain current of -100 A at TC=25℃.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN5x6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -100 A TC=25℃, VGS @ 10V 1
Continuous Drain Current ID -70 A TC=100℃, VGS @ 10V 1
Pulsed Drain Current IDM -250 A 1
Single Pulse Avalanche Energy EAS 80 mJ 1
Avalanche Current IAS -70 A 1
Total Power Dissipation PD 120 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 50 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper 1
Thermal Resistance Junction-Case RθJC 1.6 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 4 mΩ VGS=-10V, ID=-20A 2
Static Drain-Source On-Resistance RDS(ON) 6 mΩ VGS=-4.5V, ID=-15A 2
Gate Threshold Voltage VGS(th) -1.2 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -100 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SI7145DP-T1-GE3-HXY
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8L (KiCad packages3D, STEP)
  • 3D model files: si7145dp-t1-ge3-hxy-etched.step / si7145dp-t1-ge3-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si7145dp-t1-ge3-hxy.step / si7145dp-t1-ge3-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 d4f85df2b009f61b, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF