component
2SD965ASQ-R
Public Made by Adomby adom
PJSEMI Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdown2SD965ASQ-R
PJSEMI · Bipolar (BJT) · SOT-89
2SD965ASQ-R from PJSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN transistor; the datasheet gives no pin-specific limit, only the absolute maximum emitter-base voltage VEBO of 7 V and collector current IC of 5 A. |
| 2 | Collector | passive | Collector terminal of the NPN transistor, rated for VCBO 40 V, VCEO 30 V, collector current IC 5 A and power dissipation PD 750 mW at 25°C ambient. |
| 3 | Emitter | passive | Emitter terminal of the NPN transistor, rated for an emitter-base voltage VEBO of 7 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Base Cutoff Current | ICBO | 0.1 | μA | at VCB = 10 V | 2 | ||
| Emitter Base Cutoff Current | IEBO | 0.1 | μA | at VEB = 7 V | 2 | ||
| Collector Base Breakdown Voltage | V(BR)CBO | 40 | V | at IC = 100 μA | 2 | ||
| Collector Emitter Breakdown Voltage | V(BR)CEO | 30 | V | at IC = 1 mA | 2 | ||
| Emitter Base Breakdown Voltage | V(BR)EBO | 7 | V | at IE = 10 μA | 2 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 1 | V | at IC = 3 A, IB = 0.1 A | 2 | ||
| Collector Output Capacitance | Cob | 50 | pF | at VCB = 20 V, IE = 0, f = 1MHz | 2 | ||
| Collector Base Voltage | VCBO | 40 | V | 1 | |||
| Collector Emitter Voltage | VCEO | 30 | V | 1 | |||
| Emitter Base Voltage | VEBO | 7 | V | 1 | |||
| Collector Current | IC | 5 | A | 1 | |||
| Power Dissipation | PD | 750 | mW | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 167 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
2SD965ASQ-R - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sd965asq-r-etched.step/2sd965asq-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd965asq-r.step/2sd965asq-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (4 pp, sha256
9cb51f87e2ee0a0b, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).