AON6407-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S	passive	Source of the P-channel MOSFET; VDS rated -30 V.
2	S	passive	Source of the P-channel MOSFET; VDS rated -30 V.
3	S	passive	Source of the P-channel MOSFET; VDS rated -30 V.
4	G	input	Gate of the P-channel MOSFET; VGS rated ±20 V, threshold -1.0 to -3.0 V.
5	D	passive	Drain of the P-channel MOSFET; continuous drain current -100 A at TC = 25 °C (package limited).
6	D	passive	Drain of the P-channel MOSFET; continuous drain current -100 A at TC = 25 °C (package limited).
7	D	passive	Drain of the P-channel MOSFET; continuous drain current -100 A at TC = 25 °C (package limited).
8	D	passive	Drain of the P-channel MOSFET; continuous drain current -100 A at TC = 25 °C (package limited).
9	EP	passive	Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	DFN5x6-8
Category	Transistors/Thyristors
Pins	9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Breakdown Voltage	VDS	-30			V	VGS = 0 V, ID = - 250 µA	2
Gate-Source Threshold Voltage	VGS(th)	-3		-1	V	VDS = VGS, ID = - 250 µA	2
Gate-Source Leakage	IGSS	-100		100	nA	VDS = 0 V, VGS = ± 20 V	2
Zero Gate Voltage Drain Current	IDSS			-1	µA	VDS = - 30 V, VGS = 0 V	2
Zero Gate Voltage Drain Current (TJ = 55 °C)	IDSS			-10	µA	VDS = - 30 V, VGS = 0 V, TJ = 55 °C	2
On-State Drain Current	ID(on)	-30			A	VDS = - 5 V, VGS = - 10 V	2
Total Gate Charge	Qg		167	250	nC	VDS = - 15 V, VGS = - 10 V, ID = - 20 A	2
Total Gate Charge	Qg		78	120	nC	VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A	2
Turn-On Delay Time	td(on)		25	40	ns	VDD = - 15 V, RL = 15 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 1 Ω	2
Rise Time	tr		15	30	ns	VDD = - 15 V, RL = 15 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		110	170	ns	VDD = - 15 V, RL = 15 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 1 Ω	2
Fall Time	tf		30	50	ns	VDD = - 15 V, RL = 15 Ω, ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 1 Ω	2
Turn-On Delay Time	td(on)		110	170	ns	VDD = - 15 V, RL = 15 Ω, ID ≅ - 1.0 A, VGEN = - 4.5 V, Rg = 1 Ω	2
Rise Time	tr		100	150	ns	VDD = - 15 V, RL = 15 Ω, ID ≅ - 1.0 A, VGEN = - 4.5 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		100	150	ns	VDD = - 15 V, RL = 15 Ω, ID ≅ - 1.0 A, VGEN = - 4.5 V, Rg = 1 Ω	2
Fall Time	tf		50	75	ns	VDD = - 15 V, RL = 15 Ω, ID ≅ - 1.0 A, VGEN = - 4.5 V, Rg = 1 Ω	2
Continuous Source-Drain Diode Current	IS			60	A	TC = 25 °C	2
Pulse Diode Forward Current	ISM			100	A		2
Body Diode Voltage	VSD		-0.74	-1.1	V	IS = - 5 A	2
Body Diode Reverse Recovery Time	trr		50	100	ns	IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C	2
Body Diode Reverse Recovery Charge	Qrr		65	130	nC	IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C	2
Drain-Source Voltage	VDS			-30	V	TA = 25 °C	1
Gate-Source Voltage	VGS	-20		20	V	TA = 25 °C	1
Continuous Drain Current	ID			-100	A	TC = 25 °C, TJ = 150 °C	1
Continuous Drain Current	ID			-75	A	TC = 70 °C, TJ = 150 °C	1
Continuous Drain Current	ID			-31.6	A	TA = 25 °C, t = 10 s	1
Continuous Drain Current	ID			-25.3	A	TA = 70 °C, t = 10 s	1
Pulsed Drain Current	IDM			-300	A		1
Continuous Source-Drain Diode Current	IS			-60	A	TC = 25 °C	1
Continuous Source-Drain Diode Current	IS			-5.6	A	TA = 25 °C, t = 10 s	1
Single Pulse Avalanche Current	IAS			-40	A	L = 0.1 mH	1
Single Pulse Avalanche Energy	EAS			80	mJ	L = 0.1 mH	1
Maximum Power Dissipation	PD			104	W	TC = 25 °C	1
Maximum Power Dissipation	PD			66.6	W	TC = 70 °C	1
Maximum Power Dissipation	PD			6.25	W	TA = 25 °C	1
Maximum Power Dissipation	PD			4	W	TA = 70 °C	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Junction-to-Ambient Thermal Resistance	RthJA		15	20	°C/W	t ≤ 10 s	1
Junction-to-Case (Drain) Thermal Resistance	RthJC		0.9	1.2	°C/W	Steady State	1
Drain-Source On-State Resistance	RDS(on)		0.0032		Ω	VGS = - 10 V, ID = - 20 A	2
Drain-Source On-State Resistance	RDS(on)		0.005		Ω	VGS = - 4.5 V, ID = - 15 A	2
Forward Transconductance	gfs		95		S	VDS = - 15 V, ID = - 20 A	2
Input Capacitance	Ciss		8650		pF	VDS = - 15 V, VGS = 0 V, f = 1 MHz	2
Output Capacitance	Coss		1215		pF	VDS = - 15 V, VGS = 0 V, f = 1 MHz	2
Reverse Transfer Capacitance	Crss		1125		pF	VDS = - 15 V, VGS = 0 V, f = 1 MHz	2
Gate Resistance	Rg		1.7		Ω	f = 1 MHz	2
Gate-Source Charge	Qgs		27		nC		2
Gate-Drain Charge	Qgd		35		nC		2
VDS Temperature Coefficient	ΔVDS/TJ		31		mV/°C	ID = - 250 µA	2
VGS(th) Temperature Coefficient	ΔVGS(th)/TJ		6.5		mV/°C		2
Reverse Recovery Fall Time	ta		26		ns	IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C	2
Reverse Recovery Rise Time	tb		24		ns	IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C	2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part	Material	Colour / plating	Datasheet says	Page
contacts	copper		d. The DFN5x6 is a leadless package. The end of the lead terminal is exposed copper (not pl	1

CAD (KiCad official)

Symbol: AON6407-VB
Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
3D model: DFN5x6-8 (KiCad packages3D, STEP)
3D model files: aon6407-vb-etched.step / aon6407-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aon6407-vb.step / aon6407-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (9 pp, sha256 66b412ab2a9d578e, retrieved 2026-10-31, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

AON6407-VB

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3D Model

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Schematic Symbol

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Datasheet

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