Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

CMD5970

Cmos · MOSFETs · TO-252

CMD5970 from Cmos, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate drive input; VGS is rated at ±20 V maximum, with threshold of -1 to -3 V at ID=-250uA.
2 D passive Drain (also the metal tab); VDS is rated at -150 V and continuous ID is -30 A at TC=25℃.
3 S passive Source terminal; body diode continuous source current IS is -30 A maximum.

Key specifications

Parameter Value
Manufacturer Cmos
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -150 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 78 mΩ VGS=-10V, ID=-10A 2
Static Drain-Source On-Resistance RDS(ON) 90 mΩ VGS=-4.5V, ID=-8A 2
Gate Threshold Voltage VGS(th) -1 -3 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-150V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -30 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -120 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-20A 2
Drain-Source Voltage VDS -150 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -30 A TC=25℃ 1
Pulsed Drain Current IDM -120 A 1
Single Pulse Avalanche Energy EAS 648 mJ VDS=-30V, VGS=-10V, L=1mH, IAS=-36A 1
Total Power Dissipation PD 200 W TC=25℃ 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Junction-to-Ambient Thermal Resistance RθJA 40 ℃/W 1
Junction-to-Case (Drain) Thermal Resistance RθJC 1.5 ℃/W 1
Forward Transconductance gfs 23 S VDS=-5V, ID=-10A 2
Total Gate Charge Qg 60 nC VDS=-80V, VGS=0 to -10V, ID=-18A 2
Input Capacitance Ciss 4000 pF VDS=-25V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: CMD5970
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: cmd5970-etched.step / cmd5970-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmd5970.step / cmd5970.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (3 pp, sha256 4e1e8114f0a97bf3, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF