component
HESDBM3V3A1
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHESDBM3V3A1
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
HESDBM3V3A1 from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One of the two terminals of the bi-directional ESD protection diode, which clamps the protected line for transient events; the datasheet gives no separate pin name or polarity, and the rated standoff voltage VRWM is 3.3 V. |
| 2 | 2 | passive | The other terminal of the bi-directional ESD protection diode, which is connected to the protected line; the datasheet gives no separate pin name or polarity, and the rated standoff voltage VRWM is 3.3 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power (tp = 8/20 μs) | PPP | 100 | W | tp = 8/20 μs | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| Top Operating Temperature Range | Top | -55 | 150 | °C | 1 | ||
| IEC61000-4-2 (ESD) air discharge | -30 | 30 | KV | air discharge | 1 | ||
| IEC61000-4-2 (ESD) contact discharge | -30 | 30 | KV | contact discharge | 1 | ||
| IEC61000-4-4 (EFT) | 40 | A | 1 | ||||
| Breakdown voltage | VBR | 3.3 | 5 | V | @ IT = 1.0 mA, ambient 25℃ (Note 1) | 2 | |
| Reverse leakage current | IR | 0.05 | A | @ VRWM | 2 | ||
| Clamping voltage | VC | 11 | V | @ MAX IPP (Note 2) | 2 | ||
| Peak pulse current | IPP | 6.5 | A | (Note 2) | 2 | ||
| Peak pulse power | PPK | 100 | W | (Note 2) | 2 | ||
| Dynamic resistance | RDYN | 0.2 | Ω | @ tp = 100 ns (TLP) | 2 | ||
| Capacitance | C | 7 | pF | 2 | |||
| Reverse working voltage | VRWM | 3.3 | V | 2 |
CAD (KiCad official)
- Symbol:
HESDBM3V3A1 - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hesdbm3v3a1-etched.step/hesdbm3v3a1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hesdbm3v3a1.step/hesdbm3v3a1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
ef3331885a3517e2, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).