component
IRLML6302
Public Made by Adomby adom
Guangdong Hottech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRLML6302
Guangdong Hottech · MOSFETs · SOT-23
IRLML6302 from Guangdong Hottech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limited to ±12V, with threshold VGS(th) of -0.70V to -1.5V at ID = -250µA. |
| 2 | S | passive | Source; body diode continuous source current is -0.54A max and pulsed -4.9A max. |
| 3 | D | passive | Drain; drain-to-source breakdown is -20V min, continuous drain current -0.78A at TA = 25°C and pulsed -4.9A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Guangdong Hottech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current, VGS @ -4.5V | ID | -0.78 | A | TA = 25°C | 1 | ||
| Continuous Drain Current, VGS @ -4.5V | ID | -0.62 | A | TA = 70°C | 1 | ||
| Pulsed Drain Current | IDM | -4.9 | A | 1 | |||
| Power Dissipation | PD | 540 | mW | TA = 25°C | 1 | ||
| Linear Derating Factor | 4.3 | mW/˚C | 1 | ||||
| Gate-to-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | -5 | V/ns | 1 | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RJA | 230 | °C/W | 1 | |||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS = 0V, ID = -250µA | 1 | ||
| Gate Threshold Voltage | VGS(th) | -0.7 | -1.5 | V | VDS = VGS, ID = -250µA | 1 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 0.6 | VGS = -4.5V, ID = -0.61A | 1 | |||
| Static Drain-to-Source On-Resistance | RDS(ON) | 0.9 | VGS = -2.7V, ID = -0.31A | 1 | |||
| Forward Transconductance | gfs | 0.56 | S | VDS = -10V, ID = -0.31A | 1 | ||
| Drain-to-Source Leakage Current | IDSS | -1 | µA | VDS = -16V, VGS = 0V | 1 | ||
| Drain-to-Source Leakage Current | IDSS | -25 | µA | VDS = -16V, VGS = 0V, TJ = 125°C | 1 | ||
| Gate-to-Source Forward Leakage Current | IGSS | -100 | nA | VGS = -12V | 1 | ||
| Gate-to-Source Reverse Leakage Current | IGSS | 100 | nA | VGS = 12V | 1 | ||
| Total Gate Charge | Qg | 2.4 | 3.6 | nC | ID = -0.61A, VDS = -16V, VGS = -4.5V, See Fig. 6 and 9 | 1 | |
| Gate-to-Source Charge | Qgs | 0.56 | 0.84 | nC | 1 | ||
| Gate-to-Drain ("Miller") Charge | Qgd | 1 | 1.5 | nC | 1 | ||
| Continuous Source Current (Body Diode) | IS | -0.54 | A | 1 | |||
| Pulsed Source Current (Body Diode) | ISM | -4.9 | A | 1 | |||
| Diode Forward Voltage | VSD | -1.2 | V | TJ = 25°C, IS = -0.61A, VGS = 0V | 1 | ||
| Reverse Recovery Time | trr | 35 | 53 | ns | TJ = 25°C, IF = -0.61A | 1 |
CAD (KiCad official)
- Symbol:
IRLML6302 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
irlml6302-etched.step/irlml6302-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlml6302.step/irlml6302.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Guangdong Hottech datasheet (6 pp, sha256
392d2b2e295fcf42, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).