component
D8V0L1B2LPQ-7B-HXY
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownD8V0L1B2LPQ-7B-HXY
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
D8V0L1B2LPQ-7B-HXY from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | One terminal of the bi-directional ESD protection diode, which protects one bi-directional line with a working voltage of 8V and ±25kV IEC61000-4-2 contact and air discharge ratings. |
| 2 | 2 | passive | The other terminal of the bi-directional ESD protection diode, which protects one bi-directional line with a working voltage of 8V and ±25kV IEC61000-4-2 contact and air discharge ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak pulse power (tp=8/20us) @25°C | Ppk | 200 | W | tp=8/20us @25°C | 2 | ||
| ESD (IEC61000-4-2 air discharge) @25°C | VESD | -25 | 25 | kV | IEC61000-4-2 air discharge @25°C | 2 | |
| ESD (IEC61000-4-2 contact discharge) @25°C | VESD | -25 | 25 | kV | IEC61000-4-2 contact discharge @25°C | 2 | |
| Junction temperature | TJ | 150 | ℃ | 2 | |||
| Operating temperature | TOP | -55 | 150 | ℃ | 2 | ||
| Storage temperature | TSTG | -55 | 150 | ℃ | 2 | ||
| Lead temperature | TL | 260 | ℃ | 2 | |||
| Reverse Stand-off Voltage | VRWM | 8 | V | 2 | |||
| Reverse Breakdown Voltage | VBR | 9 | V | IT=1mA | 2 | ||
| Reverse Leakage Current | IR | 1 | uA | =8V | 2 | ||
| Clamping Voltage | VC | 16 | V | =6A;tp=8/20us | 2 | ||
| Clamping Voltage | VC | 13 | V | =1A;tp=8/20us | 2 | ||
| Junction Capacitance | CJ | 10 | pF | VR=0V;f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
D8V0L1B2LPQ-7B-HXY - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
2d5e957f0cf962c5, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).