component
6G02L
Public Made by Adomby adom
HL MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown6G02L
HL · MOSFETs · SOT-23-6L
6G02L from HL, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the dual MOSFET (grouped with pin 3 under G in the ordering table); gate-source voltage is limited to ±12 V. |
| 2 | S | passive | Source terminal (grouped with pin 5 under S in the ordering table); drain-source voltage is rated 20 V for the N-channel and -20 V for the P-channel. |
| 3 | G | input | Gate terminal of the dual MOSFET (grouped with pin 1 under G in the ordering table); gate-source voltage is limited to ±12 V. |
| 4 | D | passive | Drain terminal (grouped with pin 6 under D in the ordering table); continuous drain current is 6.3 A (N-channel) and -4.1 A (P-channel) at TC=25°C. |
| 5 | S | passive | Source terminal (grouped with pin 2 under S in the ordering table); drain-source voltage is rated 20 V for the N-channel and -20 V for the P-channel. |
| 6 | D | passive | Drain terminal (grouped with pin 4 under D in the ordering table); continuous drain current is 6.3 A (N-channel) and -4.1 A (P-channel) at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 20 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDS | -20 | V | 1 | |||
| Gate-Source Voltage (N-Channel) | VGS | -12 | 12 | V | 1 | ||
| Gate-Source Voltage (P-Channel) | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 6.3 | A | VGS @ 10V, TC=25℃ | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -4.1 | A | VGS @ 10V, TC=25℃ | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 4 | A | VGS @ 10V, TC=100℃ | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -2.6 | A | VGS @ 10V, TC=100℃ | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 15 | A | 1 | |||
| Pulsed Drain Current (P-Channel) | IDM | -16 | A | 1 | |||
| Single Pulsed Avalanche Energy (N-Channel) | EAS | 72 | mJ | 1 | |||
| Single Pulsed Avalanche Energy (P-Channel) | EAS | 59 | mJ | 1 | |||
| Avalanche Current (N-Channel) | IAS | 21 | A | 1 | |||
| Avalanche Current (P-Channel) | IAS | -19 | A | 1 | |||
| Total Power Dissipation | PD | 1 | W | TC=25℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 70 | ℃/W | 2 | |||
| Thermal Resistance Junction-Ambient | RθJA | 125 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 20 | V | VGS=0V,ID=250uA | 2 | ||
| Drain-Source Leakage Current (N-Channel) | IDSS | 1 | uA | VDS=16V,VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (N-Channel) | IDSS | 5 | uA | VDS=16V,VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current (N-Channel) | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 0.4 | 1.2 | V | VGS=VDS,ID=250uA | 2 | |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | 17 | 25 | mΩ | VGS=4.5V,ID=3A | 2 | |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | 21 | 30 | mΩ | VGS=2.5V,ID=2A | 2 | |
| Continuous Source Current (N-Channel) | IS | 6 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage (N-Channel) | VSD | 1.2 | V | VGS=0V, IS=1A,TJ=25℃ | 2 | ||
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -20 | V | VGS=0V,ID=-250uA | 3 | ||
| Drain-Source Leakage Current (P-Channel) | IDSS | -1 | uA | VDS=-20V,VGS=0V, TJ=25℃ | 3 | ||
| Drain-Source Leakage Current (P-Channel) | IDSS | -5 | uA | VDS=-20V,VGS=0V, TJ=55℃ | 3 | ||
| Gate-Source Leakage Current (P-Channel) | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 3 | |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -0.4 | -0.7 | -1 | V | VGS=VDS,ID=-250uA | 3 |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | 30 | 38 | mΩ | VGS=-4.5V,ID=-4.1A | 3 | |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | 38 | 53 | mΩ | VGS=-2.5V,ID=-3A | 3 | |
| Continuous Source Current (P-Channel) | IS | -4.1 | A | VG=VD=0V, Force Current | 3 | ||
| Diode Forward Voltage (P-Channel) | VSD | -1.2 | V | VGS=0V, IS=-4.1A,TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
6G02L - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
6g02l-etched.step/6g02l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);6g02l.step/6g02l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HL datasheet (9 pp, sha256
e0caee30f0f8c0f3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).