component
ME50N06A-G
Public Made by Adomby adom
MATSUKI MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownME50N06A-G
MATSUKI · MOSFETs · TO-252-2
ME50N06A-G from MATSUKI, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; logic-level control input with VGS(th) of 2 V min to 4 V max at ID=250μA and an absolute maximum of ±20 V. |
| 2 | D | passive | Drain, the middle lead of the top-view drawing; VDSS is 60 V and continuous ID is 35.1 A at TC=25℃. |
| 3 | S | passive | Source; pulsed drain current IDM is 140 A and RDS(ON) is 22 mΩ max at VGS=10V, ID=50A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MATSUKI |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250μA | 2 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V | 2 | ||
| Drain-Source On-State Resistance | RDS(ON) | 17 | 22 | mΩ | VGS=10V, ID=50A | 2 | |
| Diode Forward Voltage | VSD | 1 | 1.2 | V | IS=50A, VGS=0V | 2 | |
| Drain-Source Voltage | VDSS | 60 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 35.1 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 28.1 | A | TC=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 140 | A | 1 | |||
| Maximum Power Dissipation | PD | 59.5 | W | TC=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 38.1 | W | TC=70℃ | 1 | ||
| Operating Junction Temperature | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance-Junction to Case | RθJC | 2.1 | ℃/W | Device mounted on 1in² FR4 board with 2 oz copper | 1 |
CAD (KiCad official)
- Symbol:
ME50N06A-G - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
me50n06a-g-etched.step/me50n06a-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);me50n06a-g.step/me50n06a-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MATSUKI datasheet (5 pp, sha256
d627c1fa90d83edd, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).