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STPS10H100CT

Public Made by Adom

by adom

STMicroelectronics Schottky Diodes, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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STPS10H100CT

STMicroelectronics · Schottky Diodes · TO-220AB-3

STPS10H100CT from STMicroelectronics, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of diode 1; each diode is rated 5 A average forward current (IF(AV)) with VRRM of 100 V.
2 K passive Common cathode of both Schottky diodes, also connected to the metal tab; 2 x 5 A total 10 A per device at TC = 165 °C.
3 A2 passive Anode of diode 2; each diode is rated 5 A average forward current (IF(AV)) with VRRM of 100 V.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220AB-3
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 100 V 2
Forward rms current IF(RMS) 10 A 2
Average forward current, per diode (TO-220AB/D2PAK) IF(AV) 5 A δ = 0.5, square wave; TC = 165 °C 2
Average forward current, per device (TO-220AB/D2PAK) IF(AV) 10 A δ = 0.5, square wave; TC = 165 °C 2
Surge non repetitive forward current IFSM 180 A tp = 10 ms sinusoidal 2
Repetitive peak avalanche power PARM 515 W tp = 10 µs, Tj = 125 °C 2
Storage temperature range Tstg -65 175 °C 2
Maximum operating junction temperature Tj 175 °C Note (1): (dPtot/dTj) < (1/Rth(j-a)) to avoid thermal runaway on own heatsink 2
Junction to case, per diode (TO-220AB/D2PAK) Rth(j-c) 2.2 °C/W 2
Junction to case, total (TO-220AB/D2PAK) Rth(j-c) 1.3 °C/W 2
Coupling thermal resistance (TO-220AB/D2PAK) Rth(c) 0.3 °C/W 2
Reverse leakage current IR 3.5 µA Tj = 25 °C; VR = VRRM; pulse test tp = 5 ms, δ < 2% 3
Reverse leakage current IR 1.3 4.5 mA Tj = 125 °C; VR = VRRM; pulse test tp = 5 ms, δ < 2% 3
Forward voltage drop VF 0.73 V Tj = 25 °C; IF = 5 A; pulse test tp = 380 µs, δ < 2% 3
Forward voltage drop VF 0.57 0.61 V Tj = 125 °C; IF = 5 A; pulse test tp = 380 µs, δ < 2% 3
Forward voltage drop VF 0.85 V Tj = 25 °C; IF = 10 A; pulse test tp = 380 µs, δ < 2% 3
Forward voltage drop VF 0.66 0.71 V Tj = 125 °C; IF = 10 A; pulse test tp = 380 µs, δ < 2% 3

CAD (KiCad official)

  • Symbol: STPS10H100CT
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB-3 (KiCad packages3D, STEP)
  • 3D model files: stps10h100ct-etched.step / stps10h100ct-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stps10h100ct.step / stps10h100ct.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (15 pp, sha256 0dc59025b8129347, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF