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Contents

README

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AM9435SA

Axelite Tech · MOSFETs · SOP-8

AM9435SA from Axelite Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; the source pins (1, 2, 3) are tied together, with VDSS of -30 V and VGSS of ±20 V absolute maximum ratings.
2 S passive Source terminal of the P-channel MOSFET; the source pins (1, 2, 3) are tied together, with VDSS of -30 V and VGSS of ±20 V absolute maximum ratings.
3 S passive Source terminal of the P-channel MOSFET; the source pins (1, 2, 3) are tied together, with VDSS of -30 V and VGSS of ±20 V absolute maximum ratings.
4 G input Gate terminal of the P-channel enhancement-mode MOSFET; gate-source voltage is rated at ±20 V absolute maximum.
5 D passive Drain terminal of the P-channel MOSFET; the drain pins (5, 6, 7, 8) are tied together, with continuous drain current ID of -5.2 A at VGS = -10 V (TJ = 150 ℃).
6 D passive Drain terminal of the P-channel MOSFET; the drain pins (5, 6, 7, 8) are tied together, with continuous drain current ID of -5.2 A at VGS = -10 V (TJ = 150 ℃).
7 D passive Drain terminal of the P-channel MOSFET; the drain pins (5, 6, 7, 8) are tied together, with continuous drain current ID of -5.2 A at VGS = -10 V (TJ = 150 ℃).
8 D passive Drain terminal of the P-channel MOSFET; the drain pins (5, 6, 7, 8) are tied together, with continuous drain current ID of -5.2 A at VGS = -10 V (TJ = 150 ℃).

Key specifications

Parameter Value
Manufacturer Axelite Tech
Package SOP-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -30 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current (TJ=150℃) ID -5.2 A VGS=-10V 2
Pulsed Drain Current IDM -20 A 2
Continuous Source Current (Diode Conduction) IS -2.4 A 2
Operation Junction Temperature TJ -55 150 ℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Power Dissipation PD 2.8 W TA=25℃ 2
Power Dissipation PD 1.8 W TA=70℃ 2
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS=0V, ID=-250μA 3
Gate Threshold Voltage VGS(th) -1 -3 V VDS=VGS, ID=-250μA 3
Gate Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V, VGS=0V 3
Zero Gate Voltage Drain Current IDSS -5 μA VDS=-30V, VGS=0V, TJ=55℃ 3
On-State Drain Current ID(ON) -25 A VDS≦-5V, VGS≦-10V 3
Drain-source On-Resistance RDS(ON) 60 mΩ VGS=-10V, ID=-5.2A 3
Drain-source On-Resistance RDS(ON) 90 mΩ VGS=-4.5V, ID=-4.0A 3
Forward Transconductance Gfs 10 S VDS=-10V, ID=-5.2A 3
Diode Forward Current (Max.) Is 2.6 A 3
Diode Forward Voltage VSD -0.8 -1.2 V IS=-2.0A, VGS=0V 3
Turn-On Delay Time td(on) 7 15 nS VDD=-15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω 3
Turn-On Rise Time tr 10 20 nS VDD=-15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω 3
Turn-Off Delay Time td(off) 40 80 nS VDD=-15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω 3
Turn-Off Fall Time tf 20 40 nS VDD=-15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω 3
Thermal Resistance-Junction to Ambient RθJA 70 ℃/W 2

CAD (KiCad official)

  • Symbol: AM9435SA
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: am9435sa-etched.step / am9435sa-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); am9435sa.step / am9435sa.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Axelite Tech datasheet (6 pp, sha256 dbdf1745fe6731d4, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF