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9012-H

Public Made by Adom

by adom

Foshan Blue Rocket Elec Bipolar Transistors - BJT, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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PCB Footprint

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Datasheet

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Contents

README

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9012-H

Foshan Blue Rocket Elec · Bipolar Transistors - BJT · TO-92

9012-H from Foshan Blue Rocket Elec, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Collector passive Collector; VCBO -40 V, VCEO -20 V, continuous IC -500 mA, collector power dissipation 625 mW.
2 B passive Base; continuous base current IB -100 mA max, VEBO -5.0 V emitter-to-base rating.
3 E passive Emitter; PNP transistor emitter terminal with VEBO -5.0 V emitter-to-base rating.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package TO-92
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Base Breakdown Voltage VCBO -40 V IC=-0.1mA IE=0 2
Collector to Emitter Breakdown Voltage VCEO -20 V IC=-1.0mA IB=0 2
Emitter to Base Breakdown Voltage VEBO -5 V IE=-0.1mA IC=0 2
Collector Cut-Off Current ICBO -0.1 μA VCB=-25V IE=0 2
Emitter Cut-Off Current IEBO -0.1 μA VEB=-3.0V IC=0 2
DC Current Gain (class H) hFE(1) 144 202 VCE=-1.0V IC=-50mA 1
DC Current Gain hFE(2) 40 VCE=-1.0V IC=-500mA 2
Collector to Emitter Saturation Voltage VCE(sat) -0.18 -0.6 V IC=-500mA IB=-50mA 2
Base to Emitter Saturation Voltage VBE(sat) -0.95 -1.2 V IC=-500mA IB=-50mA 2
Base to Emitter Voltage VBE -0.67 -0.7 V VCE=-1.0V IC=-10mA 2
Collector to Base Voltage VCBO -40 V Ta=25℃ 2
Collector to Emitter Voltage VCEO -20 V Ta=25℃ 2
Emitter to Base Voltage VEBO -5 V Ta=25℃ 2
Collector Current - Continuous IC -500 mA Ta=25℃ 2
Base Current - Continuous IB -100 mA Ta=25℃ 2
Collector Power Dissipation PC 625 mW Ta=25℃ 2
Junction Temperature Tj 150 ℃ Ta=25℃ 2
Storage Temperature Range Tstg -55 150 ℃ Ta=25℃ 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC TO-92 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package. PC、IC大,hFE特性极好,与 9013 互补。 1

CAD (KiCad official)

  • Symbol: 9012-H
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: 9012-h-etched.step / 9012-h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 9012-h.step / 9012-h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256 66cc49231ec35cdb, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF